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題名 | Diffussion Wafer Designed for High Power Bipolar Junction Transistor=為高功率電晶體設計之擴散晶片 |
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作者 | 羅吉宗; 吳育民; | 書刊名 | 大同學報 |
卷期 | 26 1996.11[民85.11] |
頁次 | 頁265-275+419 |
分類號 | 448.552 |
關鍵詞 | 高功率電晶體; 擴散晶片; |
語文 | 英文(English) |
中文摘要 | 大部份的功率電晶體都以磊晶片或中子撞擊之磷攙雜晶片製作,而磊晶片之品質受磊晶層與基板間之相互擴散和外來物攙雜之問題所限制。因此最近多以特殊設計的擴散晶片做為元件之基板。本文詳加討論此擴散過程之控制要點,並將雙載子界面電晶體做於擴散晶片之拋光面上,最後討論擴散基板之特性與元件品質之關係。 |
英文摘要 | Most commercial power transistors are fabricated on epitaxial layer or neutron transmutation doping wafers. But outdiffusion and autodoping problems limit epitaxial layer quality, hence a special designed diffusion wafer as the device substrate is the new trend. The key points of diffusion process control are discussed in detail. Bipolar junction transistor was fabricated on the polished side of the diffusion wafer. The character of the diffusion wafer substrate and its device quality are discussed more detail. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。