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題名 | Study for Formation of Molybdenum and Tungsten Silicides by the Help of Cobalt=鈷幫助鉬和鎢矽化物形成之研究 |
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作者 | 楊汎美; 嚴考豐; Yang, F. M.; Yarn, K. F.; |
期刊 | 南臺工商專校學報 |
出版日期 | 19960400 |
卷期 | 22 1996.04[民85.04] |
頁次 | 頁1-6 |
分類號 | 448.532 |
語文 | eng |
關鍵詞 | 鈷; 鉬; 鎢; 矽化物; |
中文摘要 | 基底真空為10���� torr(托爾),將鉬或鎢用電子鎗蒸鍍機直接渡在未加熱的矽晶上,然後於氫氣或傳統氮氣爐中退火,既使溫度高達900℃亦不能形成矽化物。然而如果在矽和鉬或鎢之間墊一層鈷,則在相同的蒸鍍與退火條件,矽化物就很容易形成。矽晶片表面的殘餘氧化物被認為是影響鉬和鎢矽化物形成的關鍵因素:而鈷矽化物形成基本上不受此因素的影響,且可破壞這些殘餘物的完整性。而金屬在傳統的氮氣爐退火;於高溫形成矽化物,在低溫被氧化的現象,可用熱力學上的愛林漢圖來解釋。 |
英文摘要 | Tungsten or molybdenum deposited on silicon cold substrate (W/Si or Mo/Si)by electron-beam gun at a base pressure of 10���� torr is not able to form silicide even annealed at 900℃ in either N�皋r H�畝mbient. We present an easy way that Mo and W silicides can be formed on the same depositing and annealing conditions with the help of an intervened layer of cobalt. In the system of Mo (or W) /Co/Si, Mo (or W) silicide can be formed at 900℃ over CoSi�眨hich is formed at a lower temperature and is in contact with Si. The residual silicon oxide on the silicon surface is thought to inhibit silicides formation of W and Mo. The presence of cobalt, which is not impeded by the surface residual silicon oxide or other impurities for silicide formation, can induce silicidation of W and Mo. Why silicide is formed in preference to metal oxide at higher temperature is based on Ellingham diagram. |
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