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題 名 | 絕緣閘雙載子電晶體於變頻器應用的功率損耗計算及散熱片選擇=The Estimation of the Power Losses of IGBTs and the Selection of Heat Sinks for the Inverter Applications |
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作 者 | 吳英泰; 薛添福; 黃文楠; | 書刊名 | 電力電子技術 |
卷 期 | 33 1996.06[民85.06] |
頁 次 | 頁11-20 |
分類號 | 448.238 |
關鍵詞 | IGBT穩態功損; FWD穩態功損; 導通功損; 截止功損; 反向回復功損; P毡; Psat; Pon; Poff; Prr; |
語 文 | 中文(Chinese) |
中文摘要 | 本報告乃依據廠商所提供之IGBT型錄,配合廠商所歸納的動作能損概 估公式,以及研究報告所發表能損的數學近似計算式,經由型錄上所附的IGBT 各項性能曲線及其規格分別代入運算式中,得到功率損耗的估計值;此將IGBT於 變頻器中的動作功率損失,經由上述的計算式的運算後,得到近似的數值;再將 此系統(由IGBT Module為主要組成的變頻器)化成熱迴路,在IGBT Chip之接點溫 度(Junction Temperature)的限制下,即避免產生熱脫離(Thermal run away)現象為先 決的條件下,選擇具適當熱阻值的散熱片,使IGBT於安全的動作範圍(Safe Operatior Area,SOA),讓系統正常運作。 |
英文摘要 | According to the summerized formula from IGBTs' manufacturers and thepublished papers, the power losses of the IGBTs can be estimated by substituting theIGBTs' parameters provided by their manufacturers into those formula. In this paper,two sets of estimation formula for calculating the power losses of the IGBTs are investigated and compared. The total power losses of the IGBTs from both calculations givecoincident results. At last, the appropriate thermal resistance for the heat sinks, which keep thejunction temperature of the IGBTs below the limits, is also calculated. |
本系統中英文摘要資訊取自各篇刊載內容。