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題 名 | Novel In Al As/In矴Ga盁As Heterostructure Field-Effect Transistors Fabricated on GaAs Substrates=製作於砷化鎵基片上之砷化銦鋁/砷化銦鎵異質結構場效電晶體 |
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作 者 | 楊明達; 詹益仁; 吳家松; 綦振瀛; | 書刊名 | Journal of the Chinese Institute of Electrical Engineering |
卷 期 | 2:1 1995.02[民84.02] |
頁 次 | 頁29-36 |
分類號 | 448.552 |
關鍵詞 | 晶格匹配; 調制滲雜; 通道摻雜; 場效電晶體; Lattice-matched; Modulation-doped; Doped-channel; Field-effect transistors; |
語 文 | 英文(English) |