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頁籤選單縮合
題 名 | Possible Effects of Photon on the Quantum Transport in Narrow Channels[a]* |
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作 者 | Chu,C. S.; Tang,C. S.; | 書刊名 | 中原學報 |
卷 期 | 23:3 1995.07[民84.07] |
頁 次 | 頁43-48 |
分類號 | 337.471 |
關鍵詞 | 量子傳輸; 直流電導係數; 似束縳態; 能階密度; Quantum transport; Dc comductance; Guasi-bound states; Density of states; |
語 文 | 英文(English) |
中文摘要 | 本文研究在隨時間變化且作用在定點的電場下窄頻的量子傳輸現象。電場為橫波且導致內部次能帶開以及內部邊能帶間的躍遷。由於光子而導致對傳輸的壓抑作用可在直流電導係數G發現,且隨化學位能而增強。電導條數G帶有結構,這與由光子而導致的似束縛態是相關的。當一入射電子藉著吸收或放出一個或兩個光子而躍遷至次能帶邊緣時更產生主要的凹下結構和凹下一凸峰結構。由包含三個光子的過程而導致的結構亦被發現。似束縛態與次能帶底部的能階密度的奇異性具有緊緻的關聯。我們的結果證明:由於能階密度的奇異性,電子與光子之間的交互作用必需以超越有限階的微擾計算來處理。 |
英文摘要 | The quantum transport in a narrow channel (NC) is studied in the presence of a time-dependent delta-profile electric field. The electric field is taken to be transversely polarized, causing inter-subband and inter-sideband transitions. Photon-induced suppr ession, which escalates with the chemical potential, is found in the dc conductance G. There are structures in G which are related ot the photon-induced quasi-bound states (QBS). Major dip, and dip-and-peak, structures occur when an incident electron makes transition to a subband edge by absorbing or emitting one, and two, photons, respectively. Structures associated with three photon processes are states (DOS) at subband bottoms. Our results demonstrate that, due to this singular features of the DOS, the electron-photon interaction has to be treated beyond finite order perturbation. |
本系統中英文摘要資訊取自各篇刊載內容。