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題 名 | Photon-induced Quasibound States in Split-gate Devices=分離閘極元件內光感應之准束縛態 |
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作 者 | 唐志雄; 張育瑋; 倪嘉楷; | 書刊名 | 東南學報 |
卷 期 | 23 2000.12[民89.12] |
頁 次 | 頁1-20 |
分類號 | 448.533 |
關鍵詞 | 同調量子傳輸; 分離閘級元件; 准束縛態; 時變場; Coherent quantum transport; Split-gate devices; Quasibound state; Time-dependent field; |
語 文 | 英文(English) |
中文摘要 | 我們探討在分離閘極元件中,一有限寬度之橫向偏振時變場作用時的量子傳輸。 我們發展了一套廣義散射矩陣法,其中包含了時變模態匹配法。此橫向場感應同調非彈性散 射,並包括了子帶間與側帶間的躍遷。 此散射導致電導 G 產生壓制效應。此外,特別別壓 制效應-突降結構-在 G 中亦被發現。這些現象被認定為准束縛態( QBS ),是由電子躍 遷到子帶底所致。當時變場較強時,包含多光子的 QBS 現象更加明顯。這些 QBS 現象和態 密度在子帶底發散密切相關。我們也提出了可行的實驗裝置。 |
英文摘要 | We investigate the quantum transport in a split-gate device acted upon by a finite-range transversely polarized time-dependent field. A generalized scattering-matrix method is developed that has incorporated a time-dependent mode-matching scheme. The transverse field induces coherent inelastic scatterings that include both intersubband and intersideband transitions. These scatterings give rise to the DC conductance G a general suppressed feature that escalates with the chemcial potential. In addition, particular suppressed features--the dip structures--are found in G. These features are recognized as the quasibound state (QBS) features that arise from electrons making intersubband transitions to the vicinity of a subband bottom. For the case of larger field intensities, the QBS features that involve more photons are more evident. These QBS features are closely associated with the singlular density of states at the subband threshold. An experimental setup is proposed for the observation of these features. |
本系統中英文摘要資訊取自各篇刊載內容。