頁籤選單縮合
| 題 名 | Analysis of Anomalous Current-Voltage Characteristics in Floating Body Fully Depleted SOI nMOSFETs with Parasitic BJT=附有寄生雙載子接面電晶體之浮體完全空乏式絕緣體上矽薄膜金氧半場效電晶體的不尋常電流電壓特性分析 |
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| 作 者 | 楊炳章; 劉紹宗; | 書刊名 | 逢甲學報 |
| 卷 期 | 28 1995.11[民84.11] |
| 頁 次 | 頁655-665 |
| 分類號 | 448.115 |
| 關鍵詞 | 寄生雙載子接面電晶體; 金氧半場效電晶體; 電流; 電壓; 浮體; 完全空乏式絕緣體; |
| 語 文 | 英文(English) |
| 中文摘要 | 本文推導出一個分析性的模型來預測附有寄生雙載子接面電晶體之浮體完全空乏 式絕緣體矽薄膜金氧半場效電晶體的不尋常電流電壓特性。在這模型中所有雙載子接面電晶 體和金氧半場效電晶體的電流分量都被考慮。模擬結果說明單門閂和磁滯效應是由於多穩態 的浮體電壓所造成;本研究亦發現崩潰電壓和單門閂現象與寄生的雙載子接面電晶體的電流 增益和累積因素有重大關係。所有相關的如短通道及有效移動率等效應都包含在此模型中, 模擬時改變元件參數以便降低單門閂效應並得到最佳化設計。 |
| 英文摘要 | An analytic model for a fully depleted silicon-on-insulator (SOI) nMOSFET including parasitic bipolar junction tansistor (BJT) with floating body is derived to predict the anomalous ID-VGfs and ID-VDS characteristics. All current components in the MOSFET as well as parasitic BJT are considered in this model. It shows that the single-transistor latch and hysteresis in ID-VGfs characteristics is due to multistable floating body potentials. The study also reveals that the breakdown and latch phenomena are strongly dependent on the current gain and multiplication factor of the parasitic BJT. The effective mobility variation, short channel, and narrow width effects are taken into account in the model. Furthermore, parametric dependences. such as SOI film thickness and body doping concentration, are examined to alleviate the latch effect and give the physical insight for optimal design. |
本系統中英文摘要資訊取自各篇刊載內容。