頁籤選單縮合
題 名 | 物聯網異質整合之邏輯-記憶體以及類比式感測線路低耗能之積層型3D IC=Low-Cost and TSV-free Monolithic 3D-IC with Heterogeneous Integration of Logic, Memory and Sensor Analogy Circuitry for Internet of Things |
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作 者 | 吳宗達; 沈昌宏; 謝嘉民; 黃文賢; 王興祥; 薛富國; 陳綉芝; 楊智超; 謝東穎; 陳柏源; 葉文冠; | 書刊名 | 奈米通訊 |
卷 期 | 23:2 2016.06[民105.06] |
頁 次 | 頁28-33 |
關鍵詞 | 積層型三維整合線路; 遠紅外光; 雷射退火; Monolithic 3DIC; Far-infrared ray laser annealing; |
語 文 | 中文(Chinese) |
中文摘要 | 二氧化碳遠紅外線雷射退火技術是第一次發展當作活化的方法以達到在不引起免矽穿孔之積層型3D IC 的元件發生降解下並且能夠有高度的異質整合。這個製程夠實現小面積小附載垂直連導線,閘極優先之高介電質金屬閘極的金氧半場效電晶體 (MOSFET),以及非鋁金屬連導線。在次40 奈米之超薄通道金氧半場效電晶體及線路中進行驗證,發現導入二氧化碳遠紅外光雷射活化技術可有效提升開路電流50% 以上。不像在以矽穿孔為基礎的3D IC,這種積層型3D IC 使連結不同層的超寬IO(ultra-wide-IO) 能夠在低耗能下達到高頻寬。整合在晶片上的邏輯線路,6TSRAM,ReRAM,感測放大器,類比放大器,氣體感測器確認了二氧化碳遠紅外線雷射技術在異質整合的優勢。這個晶片證明了上述報告中的積層型3D IC 的多功能。這個二氧化碳遠紅外線雷射技術為基礎的免矽穿孔積層型3D IC能了解是低耗能,小佔用面積以及物聯網的高異質整合。 |
英文摘要 | For the first time, a CO_2 far-infrared laser annealing (CO_2-FIR-LA) technology was developed as the activation solution to enable highly heterogeneous integration without causing device degradation for TSV-free monolithic 3DIC. This process is capable to implement small-areasmall-load vertical connectors, gate-first high-k/metal gate MOSFETs and non-Al metal interconnects. Such a far-infrared laser annealing exhibits excellent selective activation capability that enables performance-enhanced stacked sub-40nm UTB-MOSFETs (Ion-enhanced over 50%). Unlike TSV-based 3D-IC, this 3D Monolithic IC enables ultra-wide-IO connections between layers to achieve high bandwidth with less power consumption. A test chip with logic circuits, 6T SRAM, ReRAM, sense amplifiers, analog amplifiers and gas sensors was integrated to confirm the superiority in heterogeneous integration of proposed CO_2-FIR-LA technology. This chip demonstrates the most variable functions above reported 3D Monolithic ICs. This CO_2-FIR-LA based TSV-free 3D Monolithic IC can realize low cost, small footprint, and highly heterogeneous integration for Internet of Things. |
本系統中英文摘要資訊取自各篇刊載內容。