頁籤選單縮合
題名 | 類平頭式氮化銦鎵與氮化鎵多重量子井包覆奈米柱核殼結構綠光發光二極體=Quasi-Tip-Free InGaN/GaN Core-Shell Nanorods Green Light-Emitting Diodes |
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作者姓名(中文) | 林大為; 黃治凱; 徐偉棋; 鄒安傑; 高宗聖; 陳永芳; 紀國鐘; 郭浩中; | 書刊名 | 奈米通訊 |
卷期 | 22:3 2015.09[民104.09] |
頁次 | 頁13-17 |
分類號 | 448.552 |
關鍵詞 | 發光二極體; 選擇性磊晶成長; 奈米柱核殼結構; 非極性多重量子井; Light-emitting diodes; LEDs; Selective growth; Core-shell nanorod structure; Non-polar multi quantum wells; MQWs; |
語文 | 中文(Chinese) |
中文摘要 | 本研究利用三維介電材料鈍化和選擇性磊晶成長技術製作類平頭式氮化銦鎵和氮化鎵多重量子井包覆奈米柱核殼結構綠光發光二極體。透過介電材料層的使用,改善了原先此類結構易於形成多面向多重量子井的特性,製作出大面積且銦含量分佈較均勻之多重量子井結構。而將此結構應用於發光二極體上,其原先具有之在不同注入電流下的發光波長位移和量子侷限史塔克效應等缺點都大幅減輕。本論文提供了一提升綠光發光二極體發光性能之有效方法,而此技術也提供未來在製作三維光電元件上一新想法。 |
英文摘要 | Quasi-tip-free InGaN/GaN core-shell nanorods have been successfully designed and demonstrated via the three-dimensional (3D) dielectric material passivation and the selective epitaxial growth technique. With the dielectric layers, the growth of multi quantum wells (MQWs) on the facets of constituent GaN nanorods can be effectively suppressed in the longitudinal direction, resulting in a large active region grown at the non-polar plane with a homogeneous indium (In) distribution. By exploiting the quasi-tip-free core-shell nanorods in light-emitting diodes (LEDs), the light emission characteristics show a great reduction in the emission wavelength shift as well as the quantum-confined Stark effect (QCSE) during the current injection. The enhanced performance of green LEDs derived form quasi-tip-free core-shell nanorods therefore paves a new perspective for the future development of high performance 3D optoelectronic devices. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。