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題名 | 電化學法製備氧化亞銅薄膜並探討其光電化學特性=Study of Photoelectrochemistry of Cu₂O Thin Films Prepared by Electrodeposition |
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作者 | 黃茂嘉; 林景崎; 吳錦貞; 張文昇; 顏子翔; | 書刊名 | 防蝕工程 |
卷期 | 28:2 2014.06[民103.06] |
頁次 | 頁97-103 |
分類號 | 472.15 |
關鍵詞 | 電化學沉積法; 氧化亞銅; 光電化學; Mott-Schottky plot; Electrodeposition method; Cu₂O; Photoelectrochemistry; |
語文 | 中文(Chinese) |
中文摘要 | 本研究嘗試於含乳酸之硫酸銅鍍浴中,直接以電化學法在純銅陰極板上成長氧化亞銅(Cu_2O)薄膜,鍍浴控制在35、50及65℃等三個溫度為變數,探討其對生成之薄膜微結構、光學及光電化學特性之影響。結果顯示:掃描式電子顯微鏡(FE-SEM)觀察所得薄膜形貌,於35℃低溫下所得薄膜由奈米椎體晶粒所構成,隨著溫度上升至50及65℃,構成薄膜之錐體晶粒尺寸逐漸增大,經拉曼光譜(Raman spectra)鑑定,三種溫度成長之薄膜均屬於氧化亞銅,並未出現雜相訊號。由拉曼光譜顯示:在35℃下成長之薄膜,其氧空缺訊號(150cm^(-1))較強,經由電化學進行Mott-Schottkyscan確定這些氧化亞銅薄膜均為p-type半導體,計算其載子濃度顯示在35℃成長之薄膜為4.16×10^(16)cm^(-3),比65℃成長之氧化亞銅高約10倍(6.01×10^(15)cm^(-3))。採用氙燈(強度在100mW/cm^2),搭配AM1.5濾光片模擬太陽光通過大氣層(吸收紫外線),照射地球表面以測試光電化學,顯示在35℃成長之氧化亞銅薄膜之光電流密度最強(偏壓-0.4Vvs.SCE時為-0.22mA/cm^2)約為65℃成薄膜之1.4倍,推測低溫成長之氧化亞銅薄膜晶粒較細,氧空缺較多,導電率與其光電性質較佳。 |
英文摘要 | In this study, we attempted to quantitatively interpret the effect of electrodeposition temperature on Cu_2O film's microstructure, optical and photoelectrochemical properties. Three deposit temperatures (35, 50, and 65℃) were taken into consideration. Based upon our observations, a general trend was concluded. That is, Cu_2O films deposited at lower temperature (35℃) always possessed a smaller pyramidal-like crystal size, high photolumminance and a higher carrier concentration. These properties made Cu_2O films deposited at 35℃ a better photoelectrochemical performance with photocurrent density of -0.22 mA/cm^2 (at -0.4 V vs. SCE). This value is about 35% higher than those Cu_2O films deposited at higher temperatures. Observed higher photocurrent density is likely due to the intrinsic of a higher charge carrier concentration analyzed by Mott-Schottky plot. |
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