頁籤選單縮合
題名 | 可三維堆疊鰭式及超薄通道電晶體=3D Stackable FinFETs and UTB Transistors |
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作者 | 楊智超; 黃文賢; 謝東穎; 謝嘉民; |
期刊 | 奈米通訊 |
出版日期 | 20130900 |
卷期 | 20:3 2013.09[民102.09] |
頁次 | 頁8-13 |
分類號 | 448.552 |
語文 | chi |
關鍵詞 | 累加型三維堆疊元件; 低熱預算; 可三維堆疊鰭式電晶體; 可三維堆疊超薄通道電晶體; Monolithic 3D device; Low thermal budget; 3D stackable FinFETs; 3D stackable UTB transistors; |
中文摘要 | 近年來我們利用尖峰式雷射結晶 (Pulse Laser Crystallization)技術,在多種材料上成長高品質的多晶矽材料,我們稱之為“類晶矽” (Epi-like Si),其材料特性已接近結晶矽,我們將其製作成鰭式電晶體 (Fin Field-effect Transistor, FINFETs)及超薄通道 (Ultra Thin Body, UTB)電晶體,相較於在矽晶圓 (Bulk Si Wafer)上製作電晶體,此 SOI(Silicone-on-insulator)結構所製作出的電晶體有較低漏電流,較低能量損耗,高速度等優點,目前鰭式電晶體已可以做到通道寬度 /閘極長度在 50奈米 /50奈米,超薄通道電晶體矽通道 (Channel)厚度可降低至 30奈米以內,並且有相當優良之電晶體特性,相較於目前半導體製程溫度動輒 800 oC以上,我們的製程溫度都控制在 450oC以下,利於未來發展更多樣的累加型三維堆疊元件及晶片。 |
英文摘要 | Recently, we utilized pulse laser crystallization technology to fabricate high quality poly-Si material, so call epi-like Si. With this epi-like Si, we have fabricated high performance FINFETs (Fin Field-Effect Transistor) and UTB (Ultra-Thin Body) transistors on SiO2/ Si wafer. Devices with lower leakage current, lower energy consumption and higher operating speed can be performed with this silicone-on-insulator (SOI) structure. FINFETs with 50nm/50nm (width/length) gate and UTB with ultra thin Si channel (<20 nm) have been demonstrated. The electrical properties of these devices perform quit well. As compare to high temperature process used in conventional semiconductor industry, our process temperature is lower than 450oC. This low thermal budget technology benefits for realizing various monolithic 3D devices and circuits in the future. |
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