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題名 | 新興二維半導體材料 : 黑磷烯的發展近況=The Emerging 2D Semiconductor Materials: The Recent Progress on Phosphorene |
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作者姓名(中文) | 蘇清源; | 書刊名 | 真空科技 |
卷期 | 28:2 2015.06[民104.06] |
頁次 | 頁5-11 |
分類號 | 440.34 |
關鍵詞 | 場效電晶體; 奈米電子; 能隙; 異質接面結構; Phosphorene; Field effect transistor; Nanoelectronics; Band gap; Heterostructure; 黑磷烯; |
語文 | 中文(Chinese) |
中文摘要 | 二維材料近年來成為前瞻微電子材料的研究熱點,其優異的電傳輸性質與高撓曲性,使其深具潛力,並應用於下世代的軟性電子與穿戴式元件。其中石墨烯具有高載子遷移率(Mobility),因此被廣泛研究,然而石墨烯之本質材料在缺乏能隙的情況下,無法製作高速邏輯電晶體元件(Logic Device),這限制其在積體電路之發展。近期,二維半導體材料,如MoS2、WSe2 等,具備適當能隙(0.8-1.6 eV),也已經有大面積成長的方法被提出,近期研究社群關注於其異質接面結構的研究,這種可控性的人造超晶格材料,未來在光電元件,如高感光偵測器、邏輯元件等,深具應用性。2014 年,一種新的半導體二維材料- 黑磷烯(Phosphorene)被發現,這是一種單原子層的黑磷(Black Phosphorene)結構,其特點為直接能隙(~2eV),且優異的電傳輸性質,其電晶體元件之汲極電流調制(On-current)與載子遷移率皆優於目前所知的二維層狀材料。因此近一年來引起很大關注。本文將介紹黑磷烯的近期研究,包含其電傳輸特性與光電性質,以及說明未來發展願景。 |
英文摘要 | 2D materials have attracted much attentions recently. It have been regarded as frontier electronic materials in the future due to its superior electronic transport properties and mechanical flexibility, which make it potential for high performance and wearable electronics. Graphene is a typical 2D materials with high carrier mobility; however, it still can’t be applied on logic device due to the lack of bandgap. Recently, a novel 2D material- atomic layered back phosphorus(so-called Phosphorene) have been discovered, its electronic properties, including direct bandgap(~2 eV), high carrier mobility, on-off ratio, are superior than other reported 2D materials(MoS2, WS2, MoSe2 etc.). It is a raising topic to investigate the condensed physics of phosphorene. In this review, the electrical and optical-electronic properties of phosphorene as well as the current progress and future scope will be conducted. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。