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題名 | Improved Current-Spreading Performance of an InGaN-based Light-Emitting Diode with a Clear p-GaN/n-GaN Barrier Junction=藉由p型氮化鎵/n型氮化鎵內建能障改善氮化銦鎵發光二極體之電流散佈特性 |
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作 者 | 劉亦浚; | 書刊名 | 光學工程 |
卷期 | 121 2013.04[民102.04] |
頁次 | 頁8-16 |
分類號 | 448.552 |
關鍵詞 | 電流擴散; 氮化鎵; 發光二極體; Current spreading; GaN; Light-emitting diode; |
語文 | 英文(English) |
中文摘要 | 此本論文中,為了改善氮化銦鎵發光二極體結構的電流散佈效率,我們提出了一在MQW與p-GaN層間加入一薄的高摻雜n-GaN層,在此區域所形成的p-GaN/n-GaN內建能障(energy barrier)會使LED元件具有更好的電流橫向散佈能力。此外,電流阻塞(current crowding)效應的減少抑制了LED元件寄生電阻效應。因此,在20 mA的操作電流之下,此種新穎結構能有效降低導通電壓、串聯電阻、以及提升靜電防護能力。 |
英文摘要 | The InGaN-based light-emitting diode (LED) with a clear p-GaN/n-GaN barrier junction is fabricated and investigated. Due to the built-in potential induced by this junction, superior current spreading performance is achieved. In addition, the suppression of current crowding phenomenon yields the reduced parasitic effect. Therefore, under an injection current of 20 mA, improved behaviors including lower turn-on voltage, lower parasitic series resistance, and significantly enhanced electrostatic discharge (ESD) performance are presented. |
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