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題名 | 利用硫氧化物螢光粉作為下轉移材料與抗反射層以提升矽太陽能電池轉換效率=Enhancing Conversion Efficiency of Polycrystalline Si-based Solar Cells Using Down-shifting and Anti-reflective Gd₂O₂S: Eu³⁺ Phosphor |
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作者姓名(中文) | 洪文彬; 陳登銘; | 書刊名 | 鑛冶 |
卷期 | 59:1=229 2015.03[民104.03] |
頁次 | 頁81-90 |
分類號 | 468.1 |
關鍵詞 | 太陽能電池; 次微米螢光粉; 抗反射; 光譜下轉移; 旋轉塗佈法; Gd₂O₂S:Eu³⁺; Solar cells; Anti-reflection; Down-shifting phosphors; Spin-coating; |
語文 | 中文(Chinese) |
中文摘要 | 本研究發展一種可供量產的低成本技術與硫氧化釓螢光粉材料,將具備光譜下轉移與抗反射雙重功能的Gd_2O_2S:Eu^(3+)螢光粉/聚乙烯吡咯烷酮聚合物(PVP)複材,利用旋轉塗佈製程鍍於無抗反射層的多晶矽太陽能電池表面,並與未經塗佈的多晶矽太陽能電池光電轉換特性進行比較。在模擬AM1.5G地面平均照度(1000 W/m^2)光源照射下,此一Gd_2O_2S:Eu^(3+)/PVP複材塗層可使原電池試片的短路電流與光電轉換效率分別提升6.74 mA/cm^2(增幅26.2%)與2.76%(增幅24.2%),本研究分析塗佈前後多晶太陽能電池的反射率與外部量子效率之變化及螢光粉的激發光譜之結果顯示上述增益主要來自於入射紫外光的下轉移機制與試片全波段的反射率下降所致。 |
英文摘要 | A simple and low-cost anti-reflection coating for polycrystalline Si solar cells has been developed. A solution of submicron spherical Gd_2O_2S:Eu^(3+) impregnated in a PVP matrix was spin coated on bare surface of solar cells. This device enhanced short-circuit cur rent density by 6.74 mA/cm^2 (or 26.2%) and conversion efficiency by 2.76% (or 24.2% increase). The underlying mechanism for these improvements can be attributed to the luminescent down-shifting capability in the UV range and promotion of light absorption within the measured spectral region. A suitable inorganic phosphor impregnated in a polymer matrix may serve as a feasible solution to compensate for the spectral mismatch and Fresnel reflection loss of silicon solar cells. |
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