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題名 | 應用於生醫系統中之超低功耗參考電壓產生電路=Ultra-low-power Voltage Reference Generator Circuit in Biomedical Application |
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作者 | 陸亭州; 柯明道; 冉曉雯; | 書刊名 | 電腦與通訊 |
卷期 | 148 2012.12[民101.12] |
頁次 | 頁109-115 |
專輯 | 綠能電子設計技術專題 |
分類號 | 448.532 |
關鍵詞 | 能帶隙參考電壓電路; 次臨界區; 原生電晶體; Bandgap reference circuit; BGR; Subthreshold region; Native MOS; |
語文 | 中文(Chinese) |
中文摘要 | 為了達到超低電壓操作,最被廣泛使用的技術即為次臨界區域操作,因為元件之閘源極電壓將可低於臨界電壓操作,且具有低偏壓電流特性。因此次臨界操作不僅可降低功率消耗,且對於低電壓操作時頭部空間不足之問題也有效的改善。此外使用原生電晶體亦為超低電壓應用時之方案之一,因其將可提供零臨界電壓操作。有鑒於此,本文將結合上述技術,提出一具溫度補償之超低電壓操作能隙參考電壓電路,其將可廣泛運用在超低電壓系統中。 |
英文摘要 | Nowadays, ultra-low voltage (ULV) circuits have attracted considerable interest for applications to the wearable biomedical devices, smart sensor network and passive Radio-frequency identification (RFID) due to their excellent energy optimization. MOSFETs operated in the subthreshold region are becoming increasingly popular in the low voltage and low power circuit designs because of the low gate to source voltage (VGS) which is lower than the threshold voltage (Vth) and its low bias current. Therefore, subthreshold MOSFETs not only reduce power dissipation but also offer efficient use of the available headroom of the low voltage circuit. Furthermore, native transistors with approaching zero threshold voltage are the other familiar solution for low voltage application. Recently, the extra mask and process of native transistors are becoming generally purposed process; hence native transistors had been widely applied in realistic product. The new proposed temperature compensated voltage reference circuit functions well with the output voltage VREF of 168 mV at room temperature as no extra laser trimming is needed after fabrication. The total power consumption is about 70nW. With the VDD power supply of 0.3V, the temperature coefficient (TC) of voltage reference circuit is 105 ppm/˚C as temperature varies from -20˚C to 100˚C. The chip size of the fabricated bandgap reference circuit is 0.0053mm2 |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。