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題名 | 真空熱壓燒結溫度對Cr50Cu50奈米合金靶材其微結構與電性之影響=Effect of Vacuum Hot-pressed Sintering Temperature on the Microstructure and Electrical Properties of Nanostructured Cr50Cu50 Alloy Targets |
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作者 | 張世賢; 廖振良; 梁誠; 張智堯; 黃中人; Chang, S. H.; Liao, C. L.; Liang, C.; Chang, C. Y.; Huang, J. R.; |
期刊 | 鑛冶 |
出版日期 | 20141200 |
卷期 | 58:4=228 2014.12[民103.12] |
頁次 | 頁70-77 |
分類號 | 472.6 |
語文 | chi |
關鍵詞 | 鉻銅合金; 真空熱壓燒結; 視孔隙率; 電阻率; Cr-Cu alloy; Vacuum hot-pressed sintering; Apparent porosity and electrical resistivity; |
中文摘要 | 鉻銅合金具有良好的抗電弧沖蝕特性、優越的電導性與熱導性,因此廣泛應用於電子接觸材料(Electrical contact material),近年來更被應用於銅鉻氧半導體薄膜之濺鍍靶材。而真空熱壓燒結法(Hot-pressed sintering)是一種複合型的燒結成形方法,結合了真空燒結與加壓成形兩個部分,其製程是透過一個石墨模,直接將壓力傳輸至粉末,並同時進行壓製和燒結材料。本研究運用各種不同的熱壓燒結溫度(950、1000、1050和1100℃),壓力維持在12MPa且持溫持壓1小時下,對Cr50Cu50之奈米鉻銅合金靶材進行真空熱壓燒結,並以孔隙率、相對密度、XRD分析以及金相組織觀察與其電性來進行一連串的討論,並且評估其優劣及應用價值。實驗結果顯示,Cr_(50)Cu_(50)奈米鉻銅合金靶材在12MPa,1小時下的最佳熱壓燒結溫度為1050℃,其相對密度可達96.09%,視孔隙率降至0.12%,且具有較佳之電性(電阻率為5.89×10^(-6)Ω.cm),因此更適用於鉻銅奈米合金靶材之製造。 |
英文摘要 | Vacuum hot-pressed sintering is a complex method that combines the sintering and pressing processes. In this process, the material is directly pressed and sintered through a graphite mold to transmit the pressure onto the powders. This study conducted the hot-pressed sintering process at various temperatures (950, 1000, 1050 and 1100℃) to determine the effect of sintering temperature on the properties of hot-pressed sintering nanostructured Cr_(50)Cu_(50) alloy targets. For each of these experiments we determined the porosity, relative density and electrical properties. Experimental results showed that the optimal condition of the hot-pressed sintering of nanostructured Cr_(50)Cu_(50) alloy targets was 1050℃ at12 MPa for 1 h. The relative density was 96.09% and the apparent porosity was 0.12%. The optimal electrical resistivity was 5.89×10^(-6) Ω.cm, which was suitable for the fabrication of nanostructured Cr_(50)Cu_(50) alloy targets. |
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