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題名 | 化學束磊晶系統成長氮化銦磊晶薄膜之製程研究=Investigation of InN Epilayer Grown on Ga-face GaN by RF-CBE |
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作者 | 陳維鈞; 田志盛; 吳岳翰; 郭守義; 賴芳儀; 蕭健男; 張立; Chen, Wei-chun; Tian, Jr-sheng; Wu, Yue-han; Kuo, Shou-yi; Lai, Fang-i; Hsiao, Chien-nan; Chang, Li; |
期刊 | 科儀新知 |
出版日期 | 20140300 |
卷期 | 198 2014.03[民103.03] |
頁次 | 頁20-37 |
分類號 | 448.552 |
語文 | chi |
關鍵詞 | 化學束磊晶系統; 磊晶薄膜; 半導體; 氮化銦; |
中文摘要 | III-V族半導體中的氮化銦(Indium nitride, InN)在光電與電子元件中是具有相當潛力的材料,如高載子遷移率、高漂移速度峰值、低電子質量與0.65-0.7 eV之能隙等優點。而目前大多數的InN樣品是使用分子束磊晶(MBE)與有機金屬氣相沉積(MOCVD)方式製備,但受限於InN本身之物理性質,要成長高品質InN是具有挑戰性的,由於InN之熱裂解溫度約為600 °C,無法於高溫中成長,因此目前成長高品質InN仍然是以MBE為主要鍍膜方法。本研究中使用的磊晶方式為電漿輔助化學束磊晶系統,可結合MBE與MOCVD兩者之優點成長InN,使用三甲基銦與電漿解離之氮原子做為V族與III族之來源,而影響InN結晶品質優劣的重要因子有基板種類、緩衝層、製程溫度與V/III流量比等。因此成長極性InN薄模,並分析其結構與光電特性。實驗結果指出,在V/III流量比於1.81時有最佳結晶品質,其(0002)與(1012)x-ray rocking curve半高寬分別為455 arcsec與1070 arcsec。由穿透式電子顯微鏡(TEM)之分析,可知InN與GaN緩衝層之磊晶關係為:(0002)InN//(0002)GaN與[1120]InN//[1120]GaN,並且InN中含有高密度之基面疊差。另一方面,當V/III流量比約為1.81時,InN有較高之沉積速率,約為1.9 μm/h,並且會隨著V/III流量比減少而增加。 |
英文摘要 | Indium nitride is a III-V semiconductor which is potential for optoelectronics and electronics application due to its high electron mobility, high peak drift velocity, low effective electron mass and narrow bandgap of 0.65-0.7 eV. InN has been grown using metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). It has been known that InN has a low dissociation temperature at 600 °C, such that the growth temperature is limited by the desorption of nitrogen and the thermal decomposition of the films. Therefore, the high-quality InN is usually obtained by using MBE. Various processing parameters may affect the quality of InN, such as substrate, buffer layer, substrate temperature, pressure, and V/III flow ratio. In this study, polar and semipolar InN films were prepared by plasma-assisted metal-organic molecular beam epitaxy (PA-MOMBE) which can have a high growth rate. Detailed characterizations of structural and optical properties of the grown polar InN films were carried out. The results indicated that In-polar InN films grown with the V/III ratio of ~1.81 has the smallest full width at half maximum (FWHM) value of 455 arcsec for (0002) X-ray rocking curve (XRC) andFWHMs value of 1070 arcsec for (1012). The epitaxial relationship of InN with GaN substrate is (0002)InN//(0002)GaN and [1120]InN//[1120]GaN as determined by selected area electron diffraction. Additionally, the InN growth rate decreases from 1.9 to 1.4 μm/h when the ratio increases from 1.81 to 4. |
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