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題名 | 嵌入二氧化矽柱與空氣孔隙陣列結構之氮化鎵發光二極體=GaN-based Light Emitting Diodes with Embedded SiO2 Pillars and Air Gap Array Structures |
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作者 | 賴韋志; 楊亞諭; 彭立琪; 馬慕昕; 楊士緯; 林育如; 許進恭; Lai, Wei-chih; Yang, Ya-yu; Peng, Li-chi; Ma, Mu-xin; Yang, Shih-wei; Lin, Yu-ru; Sheu, Jinn-kong; |
期刊 | 真空科技 |
出版日期 | 20130900 |
卷期 | 26:3 2013.09[民102.09] |
頁次 | 頁27-31 |
分類號 | 448.552 |
語文 | chi |
關鍵詞 | 週期性SiO₂柱及孔洞; 側向成長; 光取出效率; Periodic SiO₂ pillars and air voids; Epitaxy lateral growth; Light extraction efficiency; |
中文摘要 | 在本篇論文中,驗證了在以氮化鎵(GaN)為基本材料的發光二極體(LEDs)中嵌入不同高度的SiO2柱,並形成空氣恐系所造成的影響。而由於空氣孔隙在SiO2柱的上方,也可以了解到側向磊晶增強所造成的生長情況。由於SiO2柱與空氣孔隙形成的陣列結構,會使得磊晶的品質變好,並且達到減小逆向漏電流的效果。此外,分別比較四種不同的LED:一般結構的LED;SO2柱高度為200nm,空氣孔隙高度為500nm結構的LED;SiO2柱與空氣孔隙高度皆為500nm結構的LED;SiO2柱高度為700nm,空氣孔隙高度為400nm結構的LED。在輸入電流為20mA時,輸出功率分別為3.04mW,4.23mW,4.66mW,與4.44mW。在本篇研究中發現,結構為SiO2柱與空氣孔隙高度皆為500nm的LED,能使輸出功率比一班LED增加超過50%。 |
英文摘要 | We demonstrated GaN-based light emitting diodes (LEDs) with different embedded heights of SiO2 pillars and air gap array structures. The air gap on top of the SiO2 pillars were also realized using the enhanced epitaxial lateral overgrowth mode. With the embedded SiO2 pillars and air gap array structures, we achieved a smaller reverse leakage current due to the lateral growth-induced crystal quality improvement. Moreover, under 20 mA current injections, the output powers were 3.04, 4.23, 4.66, and 4.44 mW for conventional LED, LEDs with embedded 200 and 500 nm height of SiO2 pillars and air gaps, 500 nm height of SiO2 pillars and air gaps, and 700 and 400 nm height of SiO2 pillars and air gaps, respectively. We found that the embedded 500 nm height SiO2 pillars and 500 nm height air gap array structures could enhance LED output power by more than 50% due to the enhanced guided-light scattering efficiency in our study. |
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