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題名 | 摻雜還原氧化石墨烯於有機材料PEDOT:PSS與n型鍺之光伏元件=Hybrid Photovoltaic Devices Based on the Reduced Graphene Oxide-based Polymer Composite and n-type Ge |
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作者 | 曾建洲; 林祐仲; | 書刊名 | 真空科技 |
卷期 | 25:4 2012.12[民101.12] |
頁次 | 頁16-20 |
分類號 | 448.59 |
關鍵詞 | 石墨烯; 光響應; 鍺; Graphene; Ge; Photoresponse; |
語文 | 中文(Chinese) |
中文摘要 | 本篇製作 PEDOT:PSS / n型鍺有機無機混合結構的異質接面光電元件,將不同重量的還原氧化石墨烯摻入PEDOT:PSS材料中,製作成摻入還原氧化石墨烯之PEDOT:PSS / n型鍺結構,利用霍爾效應量測摻入還原氧化石墨烯之PEDOT:PSS的載子濃度、遷移率以及電阻率,另外觀察暗態電流-電壓曲線的順偏高電壓區,發現摻雜40 mg的還原氧化石墨烯有較高的電流,兩者都顯示出經過還原氧化石墨烯摻雜造成PEDOT:PSS電阻率下降,以及整流特性的理想因子從原本的4.83改善為1.38。另外,PEDOT:PSS / n型鍺結構由於摻入還原氧化石墨烯改善了元件光響應電流的衰減現象。 |
英文摘要 | We present a hybrid photovoltaic device based on n-type Ge and poly(3,4- ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). It is found that RGO doping may lead to increased dark conductivity. The improved of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, this RGO-doped PEDOT:PSS/n-type Ge device shows a good rectifying behavior with an ideality factor of 1.38. The increased short circuit current of the PEDOT:PSS/n-type Ge device was observed by RGO doping. The high photocurrent originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film. |
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