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題名 | 以高密度電漿輔助化學氣相沉積法製備奈米碳管及奈米碳纖維=Synthesis of Carbon Nanotubes and Carbon Nanofibers by High-density Plasma Enhanced Chemical Vapor Deposition |
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作者 | 曾信雄; 王培倫; 吳定宇; 陳克紹; 邱善得; 李文台; 陳志聖; Tzeng, Shinn-shyong; Wang, Pei-lun; Wu, Ting-yu; Chen, Ko-shao; Chou, San-der; Lee, Win-tai; Chen, Chih-shen; |
期刊 | 台電工程月刊 |
出版日期 | 20060100 |
卷期 | 689 民95.01 |
頁次 | 頁101-107 |
分類號 | 440.34 |
語文 | chi |
關鍵詞 | 奈米碳管; 奈米碳纖維; 電感耦合式電漿; 高密度電漿; 電漿輔助化學氣相沉積; 石墨化; 純化; Carbon nanotubes; Carbon nanofibers; Inductively-coupled plasma; ICP; High density plasma; Plasma enhanced chemical vapor deposition; Graphitization; Purification; |
中文摘要 | 本研究以電感耦合式高密度電漿設備進行奈米碳管及奈米碳纖維之氣相成長。以鈷-磷薄膜催化劑及乙炔碳源氣氛進行之研究顯示,300W的電漿功率可製備具部分方向性生長之奈米碳管;以鎳/氧化鋁複合催化劑及乙炔碳源氣氛則可製備產率達2.5倍之奈米碳纖維。奈米碳纖維純化處理結果顯示,以鹽酸酸洗可消除80wt.%以上之催化劑;而經2000℃石墨化熱處理可大幅改善奈米碳纖維之石墨結晶程度,並提高其抗氧化溫度200℃以上,同時亦可消除部分之催化劑。 |
英文摘要 | Carbon nanotubes (CNTs) and carbon nanofibers (CNFs) were synthesized in this study by high density plasma enhanced chemical vapor deposition using an inductively-coupled plasma (ICP) device. Partially oriented CNTs were grown at 300W ICP power by using Co-P catalyst films and C₂H₂ as carbon source. Growth of CNFs with a yield (=weight of carbon product/weight of catalyst) of 2.5 could be achieved when using Ni/Al₂O₃ composite catalysts and C₂H₂ as carbon source. Purification of the CNFs indicated that more than 80wt% of the catalysts could be removed after HCl acid treatment. Graphitization at 2000℃ showed that degree of graphitization was improved significantly and that the oxidation temperature was increased by 200℃. TGA results showed that 2000℃ heat treatment could also remove minuscule amount of catalysts. |
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