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題名 | 探討氧化鎘薄膜於不同退火環境之導電型態及晶格結構變化的原因=Different Conditions of Heat Treatment on Electrical and Structural Properties of Cadmium Oxide Films |
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作 者 | 蔡佳龍; 林祐仲; | 書刊名 | 真空科技 |
卷期 | 24:2 2011.06[民100.06] |
頁次 | 頁13-24 |
分類號 | 448.59 |
關鍵詞 | 氧化鎘; 濺鍍; 霍爾效應; 氧空位; 鎘間隙; Cadmium oxide; Sputtering; Hall effect; Oxygen vacancy; Cadmium interstitial; |
語文 | 中文(Chinese) |
英文摘要 | This study investigates the effects of thermal annealing on the structural, optical and electrical properties of cadmium oxide (CdO) fi lms by ultraviolet visible near-infrared spectrophotometer, x-ray diffraction (XRD), conductivity, ellipsometry, and scanning electron microscope measurements.Thermal annealing was a widely used method to study the structural defects. In addition, the infl uences of growth conditions on electrical characteristics and crystallographic relationships were investigated and a dependence of the conduction behavior and crystal structure upon rf power or thermal annealing was found. It is not only important to identify the rf-power and thermal-annealing effects but also to understand the defect formation mechanism for improving the crystal quality. |
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