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題名 | 摻雜三氧化鉬至五環素通道層提升有機薄膜電晶體特性=Performance Improvement of Organic Thin-film Transistors Using MoO₃ Doped Pentacene as Active Layer |
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作者 | 陳竑鈞; 李清庭; | 書刊名 | 真空科技 |
卷期 | 24:1 2011.03[民100.03] |
頁次 | 頁27-31 |
分類號 | 448.552 |
關鍵詞 | 三氧化鉬; 有機薄膜電晶體; 五環素; Molybdenum trioxide; Organic thin-film transistors; Pentacene; |
語文 | 中文(Chinese) |
中文摘要 | 本研究為了有效提升有機薄膜電晶體之載子移動率,藉由共蒸鍍法將電洞傳輸層材料之三氧化鉬摻雜至有機半導體五環素作為有機薄膜電晶體之通道層並探討其特性變化。研究結果顯示當三氧化鉬摻雜濃度為 6.7% 時元件之最大輸出電流由 -11.6 μA 提升至 -37.9 μA、場效載子移動率 0.71 cm2/V-s 提升至 1.60cm2/V-s、臨界電壓由 -21.2 V 下降至 -14.8V,結果顯示最大輸出電流及場效載子移動率皆有明顯提升,臨界電壓也因摻雜三氧化鉬而下降。本實驗以紫外光電子能譜探討摻雜三氧化鉬對於元件特性影響之機制,並證實摻雜三氧化鉬有助於通道層五環素之電洞濃度增加。由 X 光繞射分析結果發現,當三氧化鉬摻雜至五環素薄膜中,會導致其薄膜之結晶特性變差,而導致摻雜過量三氧化鉬之五環素有機薄膜電晶體的場效載子移動率變差。 |
英文摘要 | In this study, pentacene-based organic thin-fi lm transistors (OTFTs) was fabricated and investigated.To improve the performance of the OTFTs, molybdenum trioxide (MoO3) were doped in t he pentacene at different percentages (volume ratio) to serve as the active layer. Compared with the conventional OTFTs without MoO3 doping, for OTFTs with the active layer based on pentacene with MoO3 doping of 6.7%, the maximum output current was increased from –11.6 μA (at VDS = VGS =–40 V) to –37.9 μA, the effective fi eld-effect mobility of the doped OTFTs was enhanced from 0.71 cm2/V-s to 1.60 cm2/V-s, and the threshold voltage was reduced from –21.2 V to –14.8 V, and the on/off current ratio from 3.6×106 to 1.2×106. The performance improvement was attributed to the HOMO level of pentacene gradually approaching to the value of Au work function with increasing the doping percentage of MoO3, which leaded to enhancement of the p-type characteristics of the doped OTFTs and increase in the hole carrier density and output current. However, the output current and the fi eld-effect mobility decreased with increasing MoO3 doping percentage if the doping was higher than 6.7%. It is attributed to the degradation of thin fi lm crystallization, as shown by XRD analysis, which decreases the fi eld-effect carrier mobility. |
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