查詢結果分析
來源資料
頁籤選單縮合
題名 | 濺鍍沉積銅銦鎵先驅層暨大氣電漿補硒層之微結構特徵=Microstructural Characterization of Sputter Deposited Cu-In-Ga Precursor Layers and Atmospheric-plasma Selenium Layers |
---|---|
作者 | 李建勳; 楊國煇; 劉志宏; 陳錦山; Li, C. H.; Yang, K. H.; Liu, C. H.; Chen, G. S.; |
期刊 | 真空科技 |
出版日期 | 20111200 |
卷期 | 24:4 2011.12[民100.12] |
頁次 | 頁42-49 |
分類號 | 468.1 |
語文 | chi |
關鍵詞 | 覆板; CIGS太陽能電池; 先驅層; 大氣電漿; 補硒層; Superstrate; CIGS solar cells; Precursors; Atmospheric plasma; Selenium layers; |
中文摘要 | 本研究採用濺鍍氣壓結合基板溫度調節,以濺擊 Cu1.0(In0.7 Ga0.3) 三元合金靶材生長覆板(Superstrate) 架構 CIGS 太陽能電池 (Solar Cells) 之先驅層 (Precursor Layers),並接續採用大氣電漿進行補硒層的製備。薄膜之微結構特徵探討顯示,所有濺鍍條件所產生的先驅層均為Cu11(In,Ga)9 及 Cu7(In,Ga)3 兩種化合物所構成,但每種化合物之晶粒尺度會受到濺鍍參數的影響而產生極大的差異。其中,提高濺鍍氣壓或降低基板溫度利於生長晶粒尺度較細微且薄膜表面較平整之先驅層。這些晶粒尺度與薄膜表面型態之差異與兩種化合物之熔融點及流動性差異,與濺鍍沉積動力學機理有關。而大氣電漿所生長的補硒層結構相當緻密,但因在大氣環境下生長,其電漿解離的硒會被局部氧化為 SeO2。此一發現將可作為大氣電漿補硒設備及製程改善的參考。 |
英文摘要 | In this work, sputtering of a Cu1.0(In0.7 Ga0.3) tertiary target under various working pressures and substrate temperatures was perform to grow thin-fi lm precursors for superstrate-type CIGS solar cells,followed by the deposition of a selenium layer using atmospheric selenium plasma. Investigations of the thin-fi lm microstructures reveal that, while all of the precursors comprise the same phases,Cu11(In,Ga)9 and Cu7(In,Ga)3, the grain sizes for each individual phase vary significantly with the variation of the sputtering parameters. Raising sputtering pressure or reducing substrate temperature favors the growth of the precursors with smoother surface morphology and fi ner grain size of the constituent phases. These variations are related to (a) differences in melting points/viscosity of the compounds and (b) dynamics of the sputtering deposition process. Meanwhile, selenium layers grown by atmospheric plasma are dense and comprise primarily metallic selenium, together with some SeO2 due to the in-situ oxidation of the emitted selenium species by the atmospheric oxygen.This finding lends evidence for the improvements of both the plasma facilities and deposition processes. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。