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題 名 | Current Conduction Mechanisms in an Advanced Metal-Insulator-Metal Capacitor with Nickel Fully Silicided Polycrystalline Silicon Electrodes=一種由全金屬矽化鎳作為電極之先進MIM電容之電流傳導機制 |
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作 者 | 李榮祥; | 書刊名 | 清雲學報 |
卷 期 | 31:4 2011.10[民100.10] |
頁 次 | 頁31-42 |
分類號 | 448.532 |
關鍵詞 | 鈦酸鍶; 高介電係數; 全金屬矽化鎳; 肖特基發射; 傳導機制; SrTiO₃; High-k; Nickel fully silicided; Ni-FUSI; Schottky emission; Conduction mechanism; |
語 文 | 英文(English) |
中文摘要 | 一種使用全金屬矽化鎳電極和鈦酸鍶介電質且具低成本、高電容密度(25 fF/μm2) 之MIM 電容已被開發出來。無需貴重金屬材料,低電阻率之Ni3Si、Ni2Si 和NiSi 矽化鎳電極已實現並分別量測出電阻率約為105、40 和22 μΩ·cm。並展 現出良好的漏電流密度為 2 × 10-8 A/cm2 @ 1V。實驗顯示在高溫、低電場和上電 極電子注入時肖特基發射為主要傳導機制。在Ni3Si/STO、Ni2Si/STO 和NiSi/STO 介面之肖特基勢壘高度(ΦB)分別計算出為0.98、0.91 和0.78 eV。材料特性分析進 一步顯示這種結構非常適合於先進MIM 電容器。 |
英文摘要 | A low-cost metal-insulator-metal (MIM) capacitor with a high capacitance density of ~25 fF/μm2 has been developed by using nickel fully silicided (Ni-FUSI) polycrystalline silicon electrodes and the SrTiO3 (STO) dielectric. Without requiring noble metal materials, low resistivities of Ni3Si, Ni2Si and NiSi electrodes have been achieved and determined to be around 105, 40, and 22 μΩ·cm, respectively. It also displays a good leakage current density of 2 × 10−8 A/cm2 at 1 V. Experiments demonstrated that Schottky emission is the dominant conduction mechanism at high temperatures and low fields under the top-electrode injection. The schottky barrier heights (ΦB) at the Ni3Si/STO, Ni2Si/STO, and NiSi/STO interfaces were extracted firstly to be 0.98, 0.91, and 0.78 eV, respectively. Material Characterization further reveals that this structure is highly appropriate for advanced MIM capacitors. |
本系統中英文摘要資訊取自各篇刊載內容。