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題名 | 以化學氣相沉積法合成一維氧化銦鋅奈米線結構及其特性分析=Synthesis and Characterization of One-Dimensional Indium Zinc Oxide Structure by Chemical Vapor Deposition |
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作者 | 陳志榮; Chen, Chih-jung; |
期刊 | 修平學報 |
出版日期 | 20110300 |
卷期 | 22 2011.03[民100.03] |
頁次 | 頁153-162 |
分類號 | 440.34 |
語文 | chi |
關鍵詞 | 化學氣相沉積法; 氧化銦鋅; 奈米線; Chemical vapor deposition; IZO; Nanowires; |
中文摘要 | 本論文主要利用化學氣相沉積法經由氣液固(VLS)機制在低製程溫度下成長一維氧化銦鋅(IZO)奈米線於ITO 基板上,並使用掃描電子顯微鏡觀察一維氧化銦鋅奈米線樣本的表面形態、結構、長度、線徑與分佈情形,並利用X 光單晶繞射儀鑑定其結構的結晶性,再利用X 光能量散譜儀(EDS)做一維氧化銦鋅奈米線的成份分析。本實驗在成長一維氧化銦鋅奈米線的最佳實驗結果(參數為銦(In)顆粒的製程溫度為700 ℃、鋅(Zn)粉末的製程溫度為550 ℃、成長壓力為1 Torr、氬氣流量為50 sccm、氧氣流量為10 sccm),由FE-SEM 的截面分析發現,本實驗氧化銦鋅奈米線為中空結構,奈米線線徑約為100 nm到150 nm,長約為5 μm,電阻值約20 - 150 Ω。 |
英文摘要 | In this study, we report the fabrication of one-dimensional Indium Zinc Oxide(IZO)on an ITO glass substrate by chemical vapor deposition at low temperature via vapor-liquid-solid (VLS)mechanism. The morphologies and structural properties of the IZO nanowire were characterized by field emission scanning electron microscopy(FE-SEM), X-ray diffraction (XRD)and energy dispersive spectrometer(EDS). The IZO nanowires optimal experimental parameters are growth pressure is 1 Torr, argon gas flow of 50 sccm and oxygen flow of 10 sccm. In this condition, the idea temperatures are 700 ℃ for indium(In)particles and 550 ℃ for zinc (Zn)particles. The SEM images reveal that IZO nanowires have uniform diameters of approximately 100 nm to 150 nm, and their lengths are up to 5 μm The XRD results demonstrate that the nanowires are crystalline with highly preferential orientation. And our EDS analysis also proves that the composition ratio and this material are IZO nanowires. |
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