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題名 | 以MgO基板成長高準直性奈米碳管之研究=The Synthesis of Aligned Carbon Nanotubes with MgO Substrats |
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作者 | 林明憲; 劉益銘; Lin, Ming-hsien; Liu, Yih-ming; |
期刊 | 中正嶺學報 |
出版日期 | 20101100 |
卷期 | 39:2(A) 2010.11[民99.11] |
頁次 | 頁197-204 |
分類號 | 440.33 |
語文 | chi |
關鍵詞 | 氧化鎂; 蒸鍍法; 奈米碳管; MgO; Physical evaporation; Carbon nanotube; |
中文摘要 | 本研究以單晶氧化鎂(MgO)作為基材及緩衝層,利用電子槍蒸鍍法將過渡金屬觸媒(Ni)均勻蒸鍍於單晶氧化鎂基材上,並以熱裂解化學氣相沉積法(Thermal Chemical Vapor Deposition ; TCVD)成長高準直性之奈米碳管(Carbon Nanotubes, CNTs),並探討製程溫度、通氫前處理時間以及C2H2/H2流量比例對所成長CNTs形態之影響。研究中所成長之碳管形態及場發射特性以場發式掃描電子顯微鏡、穿透式電子顯微鏡、拉曼光譜以及I-V特性量測進行觀察及研究。研究結果顯示,在製程溫度800 ℃,C2H2/H2流量比例10/40,通氫前處理時間30 min,以MgO為基板可大面積成長高準直性之奈米碳管,其碳管垂直成長高度可達24.8±2.2 μm,而管壁石墨層數約8~12層,所獲得之場發射開啟電場為3.1 V/μm。 |
英文摘要 | The synthesis of aligned carbon nanotubes (CNTs) using thermal chemical vapor deposition (TCVD) and C2H2/H2 as gas sources was studied in this work. Multi-wall CNTs (MCNTs) were grown on MgO substrates, which also act as a buffer layer, by TCVD process using an evaporated Ni layer (10 nm) as a catalyst. The effects of the process parameters such as the growth temperature, the hydrogen pretreatment time and the ratio of C2H2/H2 source gases on the synthesized MCNTs were investigated. The morphology and emission properties of the grown MCNTs were observed and characterized using field-emission scanning electron microscope (FESEM), high-resolution transmission electron microscope (HRTEM), Raman spectroscopy, and the I-V measurement. Our result shows that, at the growth temperature of 800 °C , C2H2/H2 ratio of 10/40 (sccm) and pre-annealed under H2 ambience for 30 minutes, we can grow well-aligned MCNTs in large scale. The length of 24.8±2.2 μm of these MCNTs was achieved. HRTEM observation revealed that these MCNTs have a tubular structure whose tube-wall was composed of 8 to 12 layers of parallel graphene. Besides, the I-V measurement showed that they have good field emission property with a turn-on voltage (for a current density of 0.01 mA) of 3.1 V/μm. |
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