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題 名 | 應用於光伏元件之奈米多孔矽的製備與研究=Preparation and Study of Nano-Porous-Silicon (NPS) for Applications on Photo-Voltaic Devices |
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作 者 | 吳坤憲; 林哲緯; | 書刊名 | 南臺學報 |
卷 期 | 34:1 2009.07[民98.07] |
頁 次 | 頁89-102 |
分類號 | 440.34 |
關鍵詞 | 奈米多孔矽; 光伏元件; Optoelectronic; Nano-porous-silicon; NPS; Photo-voltaic devices; |
語 文 | 中文(Chinese) |
中文摘要 | 多孔矽材料具有可調變之光電特性,應用在光電元件的研製中深具潛力。本論文中,吾人利用電 化學蝕刻技術來製備奈米多孔矽(Nano-Porous-Silicon, NPS),並將之應用在光伏元件的結構設計中,探 討其作為元件的光吸收層與光反射層之光電特性。實驗過程中發現,使用重掺雜矽基板進行電化學蝕 刻,不僅較易形成奈米多孔矽結構,對於奈米結構的控制與再現性也較穩定。根據實驗結果,我們認 為以奈米多孔矽結構作為光伏元件的表面光吸收層時,孔隙率較高者具有較好的光吸收效率;當其作 為元件之內部光反射層時,低/高孔隙率差值越大且低/高孔隙率週期數越多的複層奈米多孔矽結構,表 現出較佳的反射率。 |
英文摘要 | Due to the controllable optoelectronic characteristics of porous silicon, this material has much potential in applications of optoelectronic devices. In this paper, we used electrochemical etching techniques to prepare nano-porous-silicon (NPS) structures. Optoelectronic characteristics of these as-formed NPS serving as light-absorption layers and light-reflection layers of photo-voltaic devices had been measured and analyzed, respectively. From the experimental processes, we found that to prepare NPS with controllable structures and with much higher reproducibility, heavily doped silicon wafers were more preferred as the starting materials. According to the experimental results, we concluded that when acting as light-absorption layers, layers, NPS structures with higher porosity can get higher light-absorption efficiency. While working as the internal light-reflection layers of devices, multi-layered NPS structures with larger differences in high/low porosity and more numbers of periods of high/low porosity exhibited higher reflectivity. |
本系統中英文摘要資訊取自各篇刊載內容。