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題 名 | 藉由光輔助電化學表面粗化製程增加氮化銦鎵發光二極體光取出效率=Enhanced Light Extraction Efficiency in InGaN Light-Emitting Diodes through the Photoelectrochemical Surface Roughening Process |
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作 者 | 楊仲傑; 林春敏; 林佳鋒; | 書刊名 | 光學工程 |
卷 期 | 103 2008.10[民97.10] |
頁 次 | 頁55-62 |
分類號 | 448.552 |
關鍵詞 | 圓錐狀結構; 倒六角結構; 奈米孔隙; 光輔助電化學; Cone-shaped sidewall; Hexagonal inverted pyramids; Nanoporous; Photoelectrochemical; PEC; |
語 文 | 中文(Chinese) |
中文摘要 | 在此文章中,我們利用表面粗化製程方式增加氮化銦鎵發光二極體光取出強度,此粗化的結構包含了圓錐狀的側壁、倒六角錐結構、奈米孔隙表面結構以及濕式平臺蝕刻,而些粗化的結構都是利用光輔助電學製程方式製作出。由於氮化鎵材料與空氣的折射係數差異,光產生全反射的臨界角約等於23°,導致光能從表面取出了比例只有4%,藉由這些粗化的結構可以降低全反射的效應並且增加光的散射而增加光取出效率。因此,光輔助電化學製程適合在高亮度氮化鎵發光二極體的應用。 |
英文摘要 | In this letter, we will report an InGaN-based light emitting diode with a surface roughening process that increases light output power. The roughening structure included with cone-shaped sidewall, hexagonal inverted pyramids (HIP), nanoporous surface structure and wet mesa etching. These roughening structures were fabricated by the photoelectrochemical (PEC) process. With the refractive indexes for GaN(n=2.5) and for air (n=1), the angle of total internal reflection for the light escape cone is about 23°, and the light extraction ratio from the surface is about 4$. The roughening structures could reduce the total internal reflection effect and increase the light scattering to enhance light extraction efficiency. Consequently, the PEC treated process is suitable for high powered nitride-based LEDs lighting applications. |
本系統中英文摘要資訊取自各篇刊載內容。