頁籤選單縮合
題名 | 應用奈米科技於氮化鎵覆晶式及薄膜式發光二極體效率之提升=Light Output Enhancement of GaN Flip-chip and Thin-film LEDs by Nanotechnology |
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作者 | 李佳恩; 鄭柏孝; 郭浩中; 盧廷昌; | 書刊名 | 光學工程 |
卷期 | 103 2008.10[民97.10] |
頁次 | 頁48-54 |
分類號 | 448.552 |
關鍵詞 | 氮化鎵; 發光二極體; 奈米科技; 覆晶式發光二極體; 薄膜式發光二極體; GaN; Light emitting diodes; Nanotechnology; Flip-chip LED; Thin-film LED; |
語文 | 中文(Chinese) |
中文摘要 | 氮化鎵系統之發光二極體為近年來各界之發展重點,其相關之產品與應用早已廣泛被使用於各個領域之中。有即針對近年來奈米科技應用於覆晶式及薄膜式發光二極體發光效率之提升作一個簡單扼要的敘述。 |
英文摘要 | GaN-based light emitting diodes have been intensively studied in recent years and their related products and applications have been used in various fields. In this letter, light output enhancement of flip-chip and thin-film light emitting diodes by nanotechnology will be introduced. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。