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題名 | 離子束濺鍍法成長鋯與氧化鋯薄膜特性研究=Growth and Characterization of Zircon and Zirconia Thin Films Deposition Using Ion Beam Sputtering System |
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作者 | 葉松瑋; 胡自立; 楊宗閩; | 書刊名 | 黃埔學報 |
卷期 | 47 民93.10 |
頁次 | 頁181-193 |
分類號 | 472.16 |
關鍵詞 | 離子束濺鍍; 氧化鋯; 分析式電子顯微鏡; Ion beam sputtering; Zirconia; Analysis electron microscopy; |
語文 | 中文(Chinese) |
中文摘要 | 氧化鋯近來在光電及介電材料應用相當廣泛,使其成為近來研究的重心。本實驗是利用離子束濺鍍法成長鋯及氧化鋯薄膜,首先以鍍碳銅網危基材,短時間撈取氧化鋯凝聚物,經由穿透式電子顯微鏡(TEM)觀察,主要相為非計量比的一氧化鋯,晶粒尺寸約在5-10 nm。另一種是以玻璃及矽晶圓為基材,在3小時長時間的濺鍍下,以有系統的調整各濺鍍參數,包括:離子束能量、基材溫度、氣體分壓等等,直接得到鋯及氧化鋯薄膜,在鋯膜部分,得到主要相為a-Zr,晶粒約在5-10 nm之間,在氧化鋯部分,主要相為c+t ZrO₂,晶粒大小在10-20 nm。藉由X光繞射儀及TEM觀察下,濺鍍所得之薄膜皆有良好的擇優取向。在濺鍍所得之氧化鋯高溫相,以小晶粒,氧空缺及體積制約效應等解釋之。 |
英文摘要 | Recently, Zirconia (ZrO₂) is one of the most extensively studied transition-metal oxide because of its photoelectronic properties and dielectronic properties. In this paper, thin films ware obtained by dual ion beam sputtering. By different processes, these samples can be classified into two categories. Firstly, thin films, deposited on 200 mash copper grids for 25 minutes, were investigated that many ZrO grains is about 5-10 nm in size by transmission electron microscopy (TEM). Next, Zr and ZrO₂ thin films, sputtered on si (100) wafers and glass for 180 minutes. Various processing variable were tested to deposit Zr and ZrO₂ thin films by using Zr target, were initially identified by X-ray diffraction instrument (XRD). The result shows that thin films have preferred orientations. By TEM, the Zr thin films are a-phase less than 10 nm in size. The ZrO₂ thin films are cubic (c-) and tetragonal (t-) zirconia about 10-20 nm in particle size. The high temperature phase (c-)(t-) of zirconia can be account for by the small grain size, the presence of low-valence Zr cation and the lateral constraint of the neighboring grains. |
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