頁籤選單縮合
題 名 | Development of High Quality Tunnel Oxide and Nitride Layers for Sonos Flash Memories |
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作 者 | Wu,Kuo-hong; Chen,Tung-sheng; Chung,Hsien; Kao,Chin-hsing; | 書刊名 | International Journal of Electrical Engineering |
卷 期 | 11:3 2004.08[民93.08] |
頁 次 | 頁223-227 |
分類號 | 471.6523 |
關鍵詞 | Flash memory; SONOS; Tunnel oxide; Charge-trapping efficiency; |
語 文 | 英文(English) |
英文摘要 | In the course of developing high-density solid-state semiconductor memories, SONOS (Silicon-Oxide-nitride-Oxide-Silicon) Flash memory has attracted much attention due to its numerous advantages. However, there are still many bottlenecks remain to be resolved in exploiting related technologies. The imperfect insulation of tunnel oxide has influenced data retention characteristics and the insufficient charge-trapping efficiency of trapping layer has limited the data storage capacity and the scaling trend. In this paper, an oxynitride through long-term N₂O oxidation process has improved the tunnel oxide quality and reduced its effective thickness. In addition, a nitride layer with non-uniform silicon-rich composition profile has led to improved charge-trapping efficiency. For devices fabricated with the technologies described above, both leakage and data retention characteristics are improved significantly. The results of this work shall be useful for researchers in high-density Flash memory development. |
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