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題名 | High Temperature and High Frequency Characteristics of AlGaN/GaN MOS-HFETs with Photochemical Vapor Deposited SiO[feaf]Layer= |
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作者 | 蘇炎坤; 張守進; 林天坤; 王俊凱; 柯淙凱; 沈建賦; 劉信良; 邱裕中; Su, Y. K.; Chang, S. J.; Lin, T. K.; Wang, C. K.; Ko, T. K.; Shen, C. F.; Liu, S. L.; Chiou, Y. Z.; |
期刊 | 真空科技 |
出版日期 | 20040100 |
卷期 | 16:3 2004.01[民93.01] |
頁次 | 頁7-12 |
分類號 | 448.552 |
語文 | eng |
關鍵詞 | GaN; Photo-CVD; SiO[feaf]; MOSHFET; HFET; |
英文摘要 | High quality SiO2 film was successfully deposited onto AlGaN as a dielectric layer for out /AlGaN/GaN MOS-HFETs using the photochemical vapor deposition (photo-CVD) technique, with D2 lamp as the excitation source. By comparing with other conventional AlGaN/ GaN HFETs with similar structures, as the excitation source. By comparing with other conventional AlGaN/ GaN HFETs with similar structures, we found out that the gate leakage current can be reduced by more than four orders of magnitude, even at elevated temperatures. With Vds=20V and Vg=-8V (cutoff), the leakage current at room temperature was about 6.46 mA/mm, which is almost identical to that (6.48mA/mm) of measured at 300℃, and most of all, relatively larger Id,max and gm, max could still be achieved then compared to conventional HFETs. In addition, the extrinsic cutoff frequencies fr's for both MOS-HFETs and HEFTs were measured to be 4.05 GHz and 3.36 GHz, respectively. furthermore, the corresponding famx's for MOS-HFETs and HFETs were also found to be 6.85 GHz and 5.45 GHz, respectively. |
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