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題名 | Impact of Nitride Process Conditions on SONOS Flash Devices=氮化矽製程條件對SONOS快閃式記憶體元件之影響 |
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作者姓名(中文) | 吳國宏; 陳東昇; 徐庶哲; 高進興; | 書刊名 | 中正嶺學報 |
卷期 | 32:1(A) 民92.11 |
頁次 | 頁73-80 |
分類號 | 471.6511 |
關鍵詞 | 快閃式記憶體; 電荷捕捉效率; SONOS; Flash memory; Charge-trapping efficiency; |
語文 | 英文(English) |
中文摘要 | SONOS 結構之快閃式記憶體未來有取代大部分記憶產品之潛力;然而在高記憶容量技術的發展過程當中,仍有許多瓶頸尚待克服。本論文中,研究各種不同的製程條件並審慎評估其對元件之影響,期能提供製作十億位元固態記憶體之參考。實驗結果顯示在氣化矽層中提昇矽與氣的相對含量將有效提昇元件的電荷捕捉效率;此外,實驗數據亦指出烘烤效應能明顯的改善漏電流的特性。本研究結論對十億位元SONOS快閃式記憶、體之製程條件與結構設計當可提供有用之經驗與資訊。 |
英文摘要 | SONOS (Silicon-Oxide-Nitride-Oxide-silicon) Flash memory has the potential to replace most memory products in the future. However, there are technical problems remain to be solved in the course of developing high-capacity memories. In this work, various process conditions and their influences on device characteristics have been carefully examined and evaluated for possible solution of Gbit solid-state memories. Experimental results indicate that silicon-rich nitride layer has lead to high charge-trapping efficiency and baking process can improve leakage significantly. The research conclusion could provide useful experience and information in process and structure design for Gbit SONOS flash memory applications. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。