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題 名 | A Low-Voltage Built-In Current Sensor Based on the Bulk-Driven Technique for Deep Submicron CMOS ICs=應用於深次圍米互補金氧半積體電路而以基底驅動之低電壓內建電流感測器 |
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作 者 | 黃宗柱; | 書刊名 | 中州學報 |
卷 期 | 17 2003.06[民92.06] |
頁 次 | 頁309-324 |
分類號 | 448.532 |
關鍵詞 | 超大型積體電路測試; 靜態電流測試; 內建電流感測器; 基底驅動技術; |
語 文 | 英文(English) |
中文摘要 | 本篇論文提出一種新型使用單一電壓源與基底驅動電流鏡射器之低電壓內建電流感測器。此文推導一簡易解析模型用以描述基底驅動電流鏡射器的行為,然後提出內建電流感測器的基本結構與基底驅動式之內建電流感測器設計流程,並針對各式電壓規格提出簡易而適當之偏壓電路。本文亦對內建電流感測器之速度的定義提出較為公平可信的建議,而在此一定義下,以台積電250泰米製程的模擬實驗顯示:即便是在1.0Volt低電壓電源下,此一設計 仍可以奈秒的速度測出電路的錯(Fault);在2.5Volts電壓電源下,偵測時間甚至可在0.41奈秒之內。 |
英文摘要 | This paper presents a single-powered, low-voltage built-in current sensor (BICS) based on the bulk-driven current-mirror technique. An analytic model is developed to describe the behavior of the bulk-driven current mirror. The basic BICS structure and the design procedure are then presented. For various specified supply voltages, different biasing schemes are arranged. To provide proper and fair criteria, the timing definitions in built-in current sensors are carefully defined. Experimental results show that the arrangement with a higher voltage supply can achieve a higher test rate. However, even if the supply voltage is at 1 volt, the lower-voltage design can still achieve a high speed in the order of nano-seconds. A typical design of a 2.5-volt built-in current sensor with a 25μ: 0.25μ current mirror in a 0.25μm P-well process can obtain a 0.41ns detection time. |
本系統中英文摘要資訊取自各篇刊載內容。