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題 名 | The Grain Growth and Admittance-Frequency Properties of the ZnO Semiconductor=ZnO半導體的晶粒成長及導納--頻率特性 |
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作 者 | 陳宏仁; | 書刊名 | 樹德學報 |
卷 期 | 21 1998.03[民87.03] |
頁 次 | 頁287-308 |
分類號 | 448.552 |
關鍵詞 | 晶粒成長; 導納--頻率; 活化能; 價數; 散逸角; 鬆弛時間; 電特性; Grain growth; Admittance-frequency; Activation energy; Valence; Depression angle; Relaxation time; Electrical properties; |
語 文 | 英文(English) |
中文摘要 | 藉由陶瓷燒結技術法可加入不同價數的鈷(Co),錳(Mn)及銻(Sb)離子至 氧化鋅(Zn0)變阻體中。此時變阻體的特性如:晶粒成長、電特性及導納一頻率響應一 直被研究著。在我們研究中獲得晶粒成長動量指數(n)及活化能分別等於6及230±2lKJ mole。晶粒的大小不僅隨著添加錳及鈷價數的增加而增加,而且亦隨著燒結的溫度及時間 的增加而增加。鬆弛時間(τ3)則不太受銻的價數及銻氧化物添加量多寡的影響。當添 加較高價數的錳及鈷時則可獲得最大的散逸角(θ3)及鬆弛時間。從散逸角及鬆弛時間 的變化分析,當樣品有較小的散逸角或鬆弛時間時樣品將會具有較佳的電特性。 |
英文摘要 | The ZnO varistors added various valency of cobalt, manganese and antimony ion were prepared by conventional ceramic fabrication techniques. The behaveior of varistor, such as grain growth, electrical properties and admittance-frequency response, has been studied. In this study, the grain growth kinetic exponent n is 6 and activation energy is 230±21 KJ/mole. The grain size not only increases with the valence states of manganese and cobalt but also increase with sintering temperature and time. The relation time is insensitive to the valency of antimony and amount of antimony oxide. The depression angle (θ3) and relaxation time (τ3) were maximum in composition adding high valency of manganese and cobalt. From the variations of the depression angle and relation time, it can find that the samples which exhibit small depression angle or relaxation time have better electrical properties. |
本系統中英文摘要資訊取自各篇刊載內容。