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題名 | Elimination of High Density Stacking Faults in CMOS Process=消除CMOS製程產生的高密度疊差 |
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作者姓名(中文) | 貢中元; 許靜宜; | 書刊名 | 興大工程學刊 |
卷期 | 10:3 1999.12[民88.12] |
頁次 | 頁73-78 |
分類號 | 448.5 |
關鍵詞 | 疊差; 去疵; 離子驅入; Stacking faults; Gettering; Drive-in; |
語文 | 英文(English) |
中文摘要 | 經過CMOS製程後的晶片可以觀察到高密度疊差(stacking faults)所形成的模糊 不清( haze )的區域。從本實驗的結果證明 1200 ℃離子驅入( drive-in )製程是使污 染物形成疊差凝結核的主要原因。 如果將 HCl 去疵溫度從 1000 ℃增加到 1050 ℃,可以 有效地減少疊差密度。適當的調整離子植入的劑量及能量,亦可以防止凝結核的形成。本實 驗的結果,有助於改善 CMOS 製程,使晶片表面疊差密度大量減少。 |
英文摘要 | Haze arising from a high density of stacking faults is observed in CMOS process wafers. The 1200 ℃ drive-in process is observed to be the main process to bring contamination to wafer surface and generate stacking fault nuclei. By increasing the HCl gettering temperature from 1000 ℃ to 1050 ℃ prior to the drive-in process, the stacking fault density can be effectively reduced. Proper adjustment on the field implantation dosage and energy can also inhibit the nucleation of stacking faults. The information obtained in this research is very useful to a fine tuning of a CMOS process. |
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