頁籤選單縮合
題 名 | 以電子迴旋共振電漿化學氣相沉積法成長矽碳氮晶體薄膜之研究 |
---|---|
作 者 | 吳季珍; 陳貴賢; 林麗瓊; | 書刊名 | 化工 |
卷 期 | 48:4=216 2001.08[民90.08] |
頁 次 | 頁1-10 |
分類號 | 341.37 |
關鍵詞 | 電子迴旋共振電漿化學氣相沉積; 矽碳氮晶體薄膜; Silicon carbon nitride; ECR plasma CVD; H atom; CH[feb0]NH[feaf]; |
語 文 | 中文(Chinese) |
中文摘要 | 本論文旨在以各種不同氣體組成之反應物,即氫氣的加入與否及不同碳源(分別為 CH �瓷AC �� H �砟� CH �� NH �� ), 探討其對於 ECR 電漿 CVD 系統成長 SiCN 晶體薄膜的影響, 來研究此新三元材料的成長特性。 此 SiCN 晶體之結構乃遵循α --Si �� N�瓷A而 C 與 Si 原子兩者於 SiCN 晶體結構中為相互取代的元素。 研究結果顯示,晶體中C 與 Si 的化學組成可藉由氣相反應物組成的變化而調變,主要取決於氣相中含碳及含矽自由基濃度之比例。 而以 CH �痊偕珝蔭氶A氫原子之 hydrogen abstraction reaction 可提供另一有效的含碳活性基形成途徑,因此可促使 SiCN 晶體薄膜之含碳量增加。另外,結果顯示以 C �� H �祝偕珝蔭氶A無論氫氣的加入與否,碳原子都無法有效地進入薄膜中,僅能沉積氮化矽薄膜。而 CH �� NH �祕]直接裂解而產生含碳活性基的反應速率常數較大,無論氫氣的加入與否,皆可用以沉積 SiCN 薄膜。 |
英文摘要 | The effects of H�畝ddition and carbon source (CH��,C�浹�畝nd CH�衹H��) on silicon carbon nitride (SiCN) film growth were studied in an electron cyclotron resonance chemical vapor deposition reactor. The SiCN film possessed the same structure as α-Si�衹�� wherein the Si and C are substitutional elements in the network. The results indicated that the composition of the SiCN film was adjustable by varying the composition of the reactants. To create active carbon species is crucial for the SiCN film growth. In case of CH�� as the carbon source, when H�� was introduced into the system the H atoms produced will enhance the hydrogen abstraction reaction, which are much effective for the production of active carbon at high [H] concentration. Therefore, with H�� addition the carbon contents within the films increased significantly. However, carbon was hardly incroporated into the film when deposited using C�浹�� as the source gas regardless of H�� addition during growth. In contrast to C �� H�� , carbon was incorporated successfully within the film deposited both with and without H�� addition using CH�� NH�� as the carbon source. This could result from that the rate constant of CH�� NH�� dissociation reaction is high enough; therefore the concentration of active carbon species in the gas phase was enhanced using a carbon source of CH�� NH�� without H�� addition. |
本系統中英文摘要資訊取自各篇刊載內容。