查詢結果分析
相關文獻
- 光調制反射光譜在半導體上的應用
- Room-temperature Photoreflectance as an Efficient Toll for Growth Studies of InAIGaAs on InP by Molecular Beam Epitaxy
- 半導體工業用矽化氫(Silane)之物性及事故案例
- 大氣壓力游離式質譜儀在半導體工業之應用
- 半導體工業空氣中揮發性有機化合物之分析
- 硒化鎘奈米半導體晶體的合成及在薄膜製備上的應用
- 半導體產業製程與用電特性之調查分析
- 我國動態隨機存取記憶體產業分析與策略研究
- Object-Oriented Design Methodology and Implementation of an Optimizing Adaptive Quality Controller for Semiconductor Manufacturing Processes
- VLSI所有權之動向
頁籤選單縮合
題 名 | 光調制反射光譜在半導體上的應用=The Study of Photoreflectance Spectroscopy on Semiconductor |
---|---|
作 者 | 陳國良; | 書刊名 | 中華工商專校學報 |
卷 期 | 18 1999.03[民88.03] |
頁 次 | 頁169-174 |
分類號 | 448.552 |
關鍵詞 | 光調制反射光譜; 半導體; |
語 文 | 中文(Chinese) |
中文摘要 | 光調制反射光譜可以用來探討半導體能帶間的躍遷,載子的濃度,雜質成份,激 子作用的強弱,半導體表面及界面間的電場,費米能階在表面的能量,化合物的組成,等重 要的半導體參數值。大部分的半導體在其臨界點 (critical point) 附近均有很強之光吸收 ,因此一般的絕對反射率光譜中之譜形,外表上看來是一個很緩慢變化的背景,在各臨界點 經常無法清晰地顯露出任何可以分辨的精細結構 (fine structure)。 相對的;調制光譜降 低了背景光的影響並強調結構局限在布里瓦區 (Brillouin zone) 臨界點附近之尖銳譜形。 |
英文摘要 | Photoreflectance spectroscopy is becoming an increasingly more important method to investigate semiconductor microstructures The derivative nature of this method provides maximum sensitivity to interband (intersubband) electronic transitions and thus to the band structure of the material being investigated In semiconductors and semiconductor microstructures, the optical properties are usually characterized by features of interest which are superimposed on a broad, structureless background Thus, in modulation spectroscopy, instead of directly measuring an optical spectrum the derivative with some parameter is evaluated This produces a series of sharp, derivative-like line (even at 300K) in the photon-energy region of interband (intersubband) transitions with on noticeable background Weak features not seen in the absolute spectrum are often revealed. |
本系統中英文摘要資訊取自各篇刊載內容。