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題名 | 原子層磊晶成長技術(Atomic Layer Epitaxy)於異相觸媒之應用=New Features for Atomic Layer Epitaxy on Supported Catalysts Synthesis |
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作者 | 姚品全; Yao, Pin-chyuan; |
期刊 | 觸媒與製程 |
出版日期 | 20000300 |
卷期 | 7:4 2000.03[民89.03] |
頁次 | 頁30-40 |
分類號 | 468.8 |
語文 | chi |
關鍵詞 | 原子層磊晶成長技術; 異相觸媒; Atomic Layer Epitaxy; ALE; |
英文摘要 | A complete survey for the new application of Atomic Layer Epitaxy on porous substrates as the heterogeneous catalysts has been made. Atomic Layer Epitaxy is a method which was invented by Dr. Tuomo Suntola in Finland in 1973. It is believed to be a more promising technology with many advantageous aspects over their traditional CVD or PVD opponents for producing full color VGA display. Recently, a new route for preparing the supported catalysts is developing based on the ALE technology. The so called ALE catalysts are easily prepared and have characteristics of high dispersion with excellent surface homogeneity. Besides, the ALE catalysts are more active in many cases than those prepared by traditional wet process. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。