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題 名 | 氮化鎵活性離子蝕性技術研究=Reactive Ion-Beam Etching for GaN |
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作 者 | 莊賦祥; 蘇炎坤; 陳建助; 許進恭; | 書刊名 | 真空科技 |
卷 期 | 12:3 1999.10[民88.10] |
頁 次 | 頁16-21 |
分類號 | 448.552 |
關鍵詞 | 氮化鎵; 活性離子蝕性技術; |
語 文 | 中文(Chinese) |
中文摘要 | 本論文以活性離子蝕刻技術蝕刻氮化鎵材料,控制蝕刻反應腔應力,RF功率及蝕 刻氣體之混合比例,獲得高蝕刻速率,高非等向性蝕刻及平滑之表面,以利元件製作。混合 氣體中含有 BCl �偵P Ar 氣,用以增強蝕刻的非等向性,而同時能擁有高蝕刻率。 並以掃 描式電子顯微鏡( SEM )來檢視蝕刻後之表面狀況。 |
英文摘要 | In this paper, the reactive ion-beam etching technique for GaN epilayers was studied. The reaction pressure in chamber, radio frequency (RF) power and the ratio between mixing gases were varied to obtain high etching rate, high an -isotropic profile and smooth surface for GaN device processes. The BCl �� / Ar discharges were used to etch GaN to enhance the an-isotropic etching and at the same time obtain high etching rates. The smooth surfaces after etching processes were examined by scanning electron microscopy (SEM). |
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