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題 名 | Evaluation of Lithographic Performance of Chemically Amplified Deep-UV Resist=化學增幅型深紫外光阻劑之微影製程評估 |
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作 者 | 劉宗宏; | 書刊名 | 樹德學報 |
卷 期 | 24 1999.08[民88.08] |
頁 次 | 頁69-80 |
分類號 | 448.552 |
關鍵詞 | 製程評估; 深紫外光阻劑; 微影; Process evaluation; Deep-UV resist; Lithography; |
語 文 | 英文(English) |
中文摘要 | 半導體電子材料的製造技術在過去十年已有顯著的成長,其中,化學增幅型光阻 在微影製程方面之評估,對積體電路的製作非常重要。本研究乃針對此一問題,探討深紫外 光阻劑對製程視窗、光近接效應、線性化、及線寬改變的影響。 研究結果顯示,光阻之解析能力可達到0.18微米。其中,密集線之最佳曝光能量與聚 焦深度皆比獨立線大,且0.2微米之製程寬容度較0.18微米高,但其對近接效應的影響,必 須再進一步修正,才能完全符合製程需求。此研究結果可作為提供其它深紫外光阻劑評估之 參考依據。 |
英文摘要 | The manufacture technology of semiconductor microelectronic materials has progressed at an astonishing rate during the past decade. The evaluation of chemically amplified resist in lithographic process has been remarkably important for IC fabrication. In this research, the effect of process conditions on the process window, optical proximity effect, linearity, and line width variation of the deep-UV resist has been carefully observed. The result reveals that the resist has the resolution ability of 0.18 μm L/S. The dense line has higher Eop and DOF than iso line, the process window for 0.2 μm is larger than 0.18 μm, but the influence of optical proximity effect must be further correlated. This research also offers some important information for the evaluation of deep-UV resist in lithography. |
本系統中英文摘要資訊取自各篇刊載內容。