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| 題 名 | Exact Numerical Solution of the Binding Energy of Hydrogenic Impurity in Quantum Circle and Dot |
|---|---|
| 作 者 | Hsieh,Cheng-ying; | 書刊名 | 德育學報 |
| 卷 期 | 15 1999.10[民88.10] |
| 頁 次 | 頁116-139 |
| 分類號 | 330 |
| 關鍵詞 | Hydrogenic impurity; Quantum circle; Quantum dot; |
| 語 文 | 英文(English) |
| 中文摘要 | Exact numerical solution of the lower lying state binding energies of hydrogenic impurity located at the center of a GaAs-Al�腐a�詁澡翠s quantum circle and quantum dot. The eigenfunctions of the impurity can be expressed in terms of Whittaker functions and Coulomb wave functions. The ground state and lower lying state binding energies are expressed in terms of the circle and dot radius. For the single layer quantum circle, the ground state binding energy qpproaches 4 Ry as the radius approaches infinite and zero, like a hydrogenic impurity in 2-D. For the single layer quantum dot, the ground state binding energy approaches 1 Ry as the radius approaches infinite and zero, like a hydrogenic impruity in 3-D. For the multilayer case, the ground state binding energy approaches the same value as the single layer case as the radius approaches infinite, but it approaches different value as the radius reduces to zero. Our results are in agreement with the prediction of He. |
本系統中英文摘要資訊取自各篇刊載內容。