頁籤選單縮合
題名 | Quantum Transport in a Double-Barrier Structure in the Presence of a Finite-Range Time-Modulated Potential |
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作 者 | Chu,C. S.; Liang,H. C.; | 書刊名 | Chinese Journal of Physics |
卷期 | 37:4 1999.08[民88.08] |
頁次 | 頁411-420 |
分類號 | 330 |
關鍵詞 | |
語文 | 英文(English) |
英文摘要 | We have studied the quantum transport phenomena in a double-barrier structure acted upon by a finite-range time-modulated potential. Inter-side-band mhw transitions are made possible by the finiteness in the range of the oscillating field. For the case when the barrier width is small, such that the resonance state in between the barriers is too broadened, the dc conductance G exhibits peaks or dip structures when the chemical potential μ is at mhw above the band bottom. For the case when the barrier width is large, such that the resonance state in between the barriers is well defined, the above feature is masked by resonant tunneling processes when μ is at energies mhw away from the resonant energy E�k. In both cases, the dips or peaks in G are due to the temporary trapping of the transmitting electrons by the quasi-bound states. Furthermore, for the latter case, we also obtain the quenching of the resonant transmission found by Wagner, but with a small quantitative modification. Our calculation is nonperturbative which is valid for arbitrary potential strength and frequency. The form of the time-modulated potential is expected to be realized in a gate-induced potential configuration. |
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