頁籤選單縮合
| 題 名 | Functional Al戓Ga[fec5]As/GaAs Heterostructure-Emitter Bipolar Transistor with InGaAs/GaAs Base |
|---|---|
| 作 者 | 蔡榮輝; | 書刊名 | 建國學報 |
| 卷 期 | 18(下) 民88.06 |
| 頁 次 | 頁481-487 |
| 分類號 | 448.552 |
| 關鍵詞 | Negative-differential-resistance; Quantum well; Pseudomorphic base; Avalanche multiplication; |
| 語 文 | 英文(English) |
| 英文摘要 | In this paper, a functional heterostructure-emitter bipolar transistor (HEBT) with a graded-Al�腐a�詁澡翠s confinement layer and a pseudomorphic InGaAs base structure is fabricated and demonstrated. Due to the insertion of an InGaAs quantum well (QW) between thhe emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. Furthermore, the potential spike of the graded-Al�腐a�詁澡翠s/GaAs heterojunction is expected to smooth out which results in a lower offset voltage. The excellent transistor characteristics include a high current gain of 120 and a low offset voltage of 100 mV. In addition, an interesting Sshaped multiple negative differential resistance (MNDR) phenomenon is observed in the inverted operation mode. This may be attributed to an avalanche multiplication and a sequential two-stage barrier lowering effect resulting from the accumulation of holes at the base and electrons at the InGaAs quantum well, respectively. Consequently, owing to the remarkable transistor performance and MNDR characteris- tics, the studied HEBT shows good promise for applications in amplifiers and multiple-valued logic circuits. |
本系統中英文摘要資訊取自各篇刊載內容。