查詢結果分析
相關文獻
- 鈦底層材料誘發反應性濺鍍鉭基擴散層之相轉變行為
- 非晶質Ta-Ni薄膜製備與銅金屬化製程整合
- Political Party Development
- Junior College Students' Perception and Use of Mandarin 爽(Shuang)and Taiwanese 爽(Song)--A Case Study of TJCC
- Political Democratization and Constitutional Reform in Taiwan
- Is Taiwan Riding an American Bubble Economy﹖
- Taiwan's Democratization & Its Implications for International Relations Theory
- 未來臺灣藝術教育設計上幾組座標的有機對應
- Risk Management in Taiwan
- A Study on the Application of Computers in Basic Graphic Design Course using the Hyper Talk Scripting Language
頁籤選單縮合
題名 | 鈦底層材料誘發反應性濺鍍鉭基擴散層之相轉變行為=Phase Formation behavior in reactively Sputtered Ta-based Barrier Layers Induced by a Titanium Underlayer |
---|---|
作者 | 陳松德; 許振聲; 黃獻慶; 陳慶洪; 陳錦山; Chen, S. T.; Hsu, C. S.; Huang, S. C.; Chen, E. C.; Chen, G. S.; |
期刊 | 真空科技 |
出版日期 | 19990500 |
卷期 | 12:1 1999.05[民88.05] |
頁次 | 頁16-25 |
分類號 | 448.552 |
語文 | chi |
關鍵詞 | 鈦底層材料; 反應性濺鍍製程; 擴散層; 相轉變行為; 鉭基; Ta; Ta-N; |
中文摘要 | 本研究利用反應性濺鍍製程,在不同氬氣/氮氣流量比例的氣氛,將鉭(Ta)與不同 氮含量之鉭基 (Ta-N) 薄膜沈積在 (100) 矽晶 (或熱氧化介電層 ) 基材上, 並利用 X 光 燒射分析、電阻率量測、電子束微探儀及高解析掃瞄電子顯微分析術觀察 Ti 黏著層與氮流 量對 Ta 與 Ta-N 薄膜相轉變的影響。 結果發現在矽基晶圓會沈積出高電阻率 (∼ 200 u Ω -cm) 之介穩態正方體β -Ta; Ti 黏著層則會誘發 Ta 原子以局部磊晶的模式孕育並成 長低電阻率 (∼ 30 u Ω -cm) 之體心立方α -Ta。 同時,Ti 黏著層則會使 Ta-N 產生一 個新的相轉變行為,依序沈積氮填充 (∼ 27 at%) α -Ta、非晶質 Ta �� N 與晶質 TaN, 並提高沈積氮飽和α -Ta、 非晶質 TaN 與計量比 TaN 所需之氮流量值, 與促使 Ta 及 Ta-N 薄膜在電性及顯微結構上產生實質的變化。 |
英文摘要 | Tantalum (Ta) and nitride-related (Ta-N) thin films were sputter deposited at different argon/nitrogen flow ratios on (100) silicon wafers and thermal oxide (SiO �� ) dieledtric layers with and without a Ti adhesion layer, and the effect of the underlying Ti layer and varying nitrogen flow rate on phase transition behavior of the tantalum-related films were investigated using x-ray diffractometry, resistivity measurement, and scanning electron microscopy. It was found that Si/SiO �� substrates favor the formation of high-resistivity ( ∼ 200 u Ω -cm) tetragonal β -Ta. However, a Ti adhesion layer changes the phase-forming behavior of the Ta- based films expected for Si/SiO �� substrates by promoting the formation of low-resistivity (∼ 30 u Ω -cm) body-centered cubic α -Ta arising from epitaxial relationship between α -Ta (110) and Ti (001). Moreover, the underlying Ti layer increases the critical nitrogen flow rates deemed necessary to form nitrogen- saturated α -Ta, amorphous Ta �� N and NaCl-type TaN on Si/SiOqsubstrates. Consequently, the electrical properties and microstructures associated with such types of films are substantially changed. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。