頁籤選單縮合
題 名 | Theory of the Ambipolar Model Applied to the Quantum Efficiency of Photocurrents in Semiconductors |
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作 者 | Chang,Ching-chung; | 書刊名 | Chinese Journal of Physics |
卷 期 | 36:5 1998.10[民87.10] |
頁 次 | 頁725-732 |
分類號 | 337.472 |
關鍵詞 | |
語 文 | 英文(English) |
英文摘要 | A theoretical analysis is mode for a P-polarized electromagnetic surface wave propagating along a plane-parallel ambipolar semiconductor plate. Fourier transform analysis is used to derive a general formula for the determination of the dependence of the electron and hole concentration distribution function, the photocurrents, and the quantum efficiency of the excess carrier generation faction in the steady state. We give a complete two dimensional analysis of the problem, taking surface recombination and the vertical diffusion current into account. We present the analysis and discuss the excess carrier photocurrent and quantum efficiency in the two cases for which the surface recombination velocity Sp→0, and Sp→∞。 |
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