頁籤選單縮合
題 名 | Optical Properties of Zn₁-xMnxSe Epilayers Grown by Molecular Beam Epitaxy |
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作 者 | Chou,W. C.; Ro,C. S.; Hong,D. Y.; Yang,C. S.; Lin,C. Y.; Lin,T. Y.; Chiu,K. C.; Yang,T. R.; Lin,C. M.; Chuu,D. S.; Uen,W. Y.; | 書刊名 | Chinese Journal of Physics |
卷 期 | 36:2(Part1) 民87.04 |
頁 次 | 頁120-127 |
分類號 | 336.9 |
關鍵詞 | |
語 文 | 英文(English) |
英文摘要 | Zn₁-xMnxSe (x≦0.78) epilayers were grown on the GaAs (001) substrate with tilt angle 0, 3, 10, and 15 degrees toward [010] by the molecular beam epitaxy. The reflectivity, transmission, and photoluminescence experiments were used to measure the energy gap of the epilayers. A red shift of 4 meV was found as the substrate tilt angle increased from 0 to 15 degrees. The red shift in band gap energy is attributed to the increasing incoporation of smaller Zn ion with the increase in the kink density which results from the increase in the substrate tilt angle. In addition, the lattice vibration of the Zn₁-xMnxSe (0 ≦ x ≦ 0.78) epilayers measured by the Raman scattering was found to follow the intermediate mode behavior of type lb instead of type lc. The force constants Fmnse = 2.81 x 10⁶ amu.cm⁻² and Fznse = 3.96 x 10⁶ amu.cm⁻² were obtained. |
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