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題名 | Operation of High Speed Switching Systems Based on Bipolar Transistors in Nuclear Radiation Environments=輻射環境中雙極電晶體高速切換系統之運作 |
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作者 | Montasser,K. I.; Kamh,S. A,; Soliman,F. A. S.; El-Maksood AbdA. M.; |
期刊 | 核子科學 |
出版日期 | 19980400 |
卷期 | 35:2 1998.04[民87.04] |
頁次 | 頁103-112 |
分類號 | 449.6 |
語文 | eng |
關鍵詞 | 輻射環境; 雙極電晶體高速切換系統; Bipolar transistor; Switching system; Nuclear radiation; |
英文摘要 | Operation of high speed switching systems based on bipolar transistors in nuclear radiation environments is investigated theoretically, by applying home developed computer programs, and experimentally. The general switching equations of both the active device and circuit are solved, where the transient switching time parameters are computed. The study has been extended to include the effects of different nuclear radiation types, such as neutrons, protons, electrons, and gamma; on the devices, as well as their corresponding effects on the switching system behaviour. The bipolar transistors have shown to lose most of their forward current gaim values, and consequently, the transient switching time parameters of the system show pronounced decrease which causes faster switching phenomenon. On the other hand, the output current level of the system shows severe degradation, where its value decreases with both the radiation type, fluence, and energy. |
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