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題 名 | 8-14 μm Normal Incident Optical Transition in GaSb/InAs Superlattices=GaSb/InAs超晶格中8∼4μm正λ射光轉移之探討 |
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作 者 | 俞朝福; 陳鍚銘; 蘇炎坤; | 書刊名 | 高雄科學技術學院學報 |
卷 期 | 28 1998.12[民87.12] |
頁 次 | 頁47-63 |
分類號 | 448.53 |
關鍵詞 | 副能帶吸收; 帽層及緩衝層; 紅外線檢測器; Intersubband absorption; Cap and buffer layers; Infrared photodetector; |
語 文 | 英文(English) |
中文摘要 | 利用n-型的InAs做為帽層及緩衝層,我們做出一種新型的Tvpell GaSb/lnAs超晶 格,讓構造可以產生副能帶間的正入射吸收。 由實驗發現,副能帶間的吸收受到不同 n 型 InAs 帽層及緩衝層的影響甚鉅。副能帶間的轉移起因於 n 型 InAs 帽層及緩衝層中,重電 洞能帶及輕電洞能帶的強烈混合,本文亦證實副能帶間產生極大的吸收。該吸收所對應之波 長在 8 ∼ 14 μ m 之範圍,因此該構造可以用做紅外線檢測器。 |
英文摘要 | Normal incidence intersubband absorption of a novel type II GaSb/lnAs superlattices can be obtained by utilizing InAs n-type cap and buffer layers. The intersubband absorption was found to be affected by using differeint InAs n-type cap and buffer layers. The intersubband transition can occur due to the strong mixing of the heavy-hole band and the light-hole band for inAs n-type cap and buffer layers, and large absorption was also demonstrated. The corresponding wavelength of intersubband absorptio n is in the range of 8-14 μ m. Hence it shows the potential application as an infrared photodetector. |
本系統中英文摘要資訊取自各篇刊載內容。