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題 名 | Schottky Barrier Diodes with Undoped and Doped Polyacetylene=使用非摻雜和摻雜的聚乙炔膜製造肖特基位障二極體 |
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作 者 | 鄭建銓; | 書刊名 | 四海工專學報 |
卷 期 | 6 1991.06[民80.06] |
頁 次 | 頁213-225 |
分類號 | 468 |
關鍵詞 | 二極體; 肖特基位障; 非摻雜; 摻雜; 聚乙炔膜; 製造; |
語 文 | 英文(English) |
英文摘要 | Schottky barrier junctions with undoped or lightly doped polyacetylene were developed. The results show the excellent rectifying properties. The cutin voltage (Vc) is obtained of about 0.8V for Al contact from the I-V relationship. The built-in potential and the width of the depletion layer are obtained from the C-V measurements. However, the ideality factor (n) is greater than 1. Departures from the theoretical value (n=1) may be caused by extensive recombinations in the depletion region. |
本系統中英文摘要資訊取自各篇刊載內容。